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Power Transistor. IPA60R250CP Datasheet

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Power Transistor. IPA60R250CP Datasheet






IPA60R250CP Transistor. Datasheet pdf. Equivalent




IPA60R250CP Transistor. Datasheet pdf. Equivalent





Part

IPA60R250CP

Description

Power Transistor



Feature


CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rate d • High peak current capability • Qualified according to JEDEC1) for targ et applications • Pb-free lead platin g; RoHS compliant CoolMOS CP is designe d for: • Hard switching SMPS topologi es Product Summary V DS @ Tj,max R D S(on),max@T j= 25°C Q g,typ 6.6.
Manufacture

Infineon Technologies

Datasheet
Download IPA60R250CP Datasheet


Infineon Technologies IPA60R250CP

IPA60R250CP; IPA60R250CP 650 V 0.250 Ω 26 nC PG- TO220 FP Type IPA60R250CP Package PG- TO220FP Marking 66RR225909PP Maximum ratings, at T j=25 °C, unless otherwis e specified Parameter Continuous drain current2) Pulsed drain current3) Ava lanche energy, single pulse Avalanche energy, repetitive t 3),4) AR Aval anche current, repetitive t 3),4) A R MOSFET dv /dt rugg.


Infineon Technologies IPA60R250CP

edness Gate source voltage Power dissi pation Operating and storage temperatur e Mounting torque Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS E AR I AR dv /dt V GS I D=5.2 A, V DD=50 V I D=5.2 A, V DD=50 V V DS=0...480 V static AC (f >1 Hz) P tot T C=25 °C T j, T stg M2.5 scre ws Value 12 8 40 345 0.52 5.2 50 ±20 ±30 33 -55 ... 150 50 .


Infineon Technologies IPA60R250CP

Unit A mJ A V/ns V W °C Ncm Rev.2.1 p age 1 2012-01-09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward cur rent2) Diode pulse current3) Reverse di ode dv /dt 5) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPA60R250C P Value 12 40 15 Unit A V/ns Paramet er Symbol Conditions min. Values typ . Unit max. Thermal.

Part

IPA60R250CP

Description

Power Transistor



Feature


CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rate d • High peak current capability • Qualified according to JEDEC1) for targ et applications • Pb-free lead platin g; RoHS compliant CoolMOS CP is designe d for: • Hard switching SMPS topologi es Product Summary V DS @ Tj,max R D S(on),max@T j= 25°C Q g,typ 6.6.
Manufacture

Infineon Technologies

Datasheet
Download IPA60R250CP Datasheet




 IPA60R250CP
CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Product Summary
V DS @ Tj,max
R DS(on),max@T j= 25°C
Q g,typ
6.6
IPA60R250CP
650 V
0.250
26 nC
PG-TO220 FP
Type
IPA60R250CP
Package
PG-TO220FP
Marking
66RR225909PP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS
E AR
I AR
dv /dt
V GS
I D=5.2 A, V DD=50 V
I D=5.2 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
M2.5 screws
Value
12
8
40
345
0.52
5.2
50
±20
±30
33
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev.2.1
page 1
2012-01-09




 IPA60R250CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPA60R250CP
Value
12
40
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
- - 3.75 K/W
- - 80
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0,52 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
V DS=600 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=7.8 A,
T j=25 °C
V GS=10 V, I D=7.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.22 0.25
0.59 -
1.3 -
Rev.2.1
page 2
2012-01-09




 IPA60R250CP
Parameter
Dynamic characteristics
Symbol Conditions
IPA60R250CP
min.
Values
typ.
Unit
max.
Input capacitance
C iss
Output capacitance
Effective output capacitance, energy
related6)
Effective output capacitance, time
related7)
Turn-on delay time
C oss
C o(er)
C o(tr)
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=7.8 A,
R G=23.1
-
-
-
-
-
-
-
-
1300
65
55
150
40
17
110
12
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=7.8 A,
V GS=0 to 10 V
-
-
-
-
6 - nC
9-
26 35
5 -V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=7.8 A,
T j=25 °C
- 0.9 1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1) J-STD20 and JESD22
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 330 - ns
- 4.5 - µC
- 27 - A
2) Limited only by maximum temperature
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) ISDID, di/dt200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev.2.1
page 3
2012-01-09



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