LINEAR MOSFET. APL602B2G Datasheet

APL602B2G MOSFET. Datasheet pdf. Equivalent


Advanced Power Technology APL602B2G
APL602B2(G)
APL602L(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
600V 49A 0.125
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
B2
T-MAX
TO-264
L
• Higher FBSOA
• Popular T-MAX™ or TO-264 Package
• Higher Power Dissipation
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APL602B2-L(G)
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
600
49
196
±30
±40
730
5.84
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
49
50
3000
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 24.5A)
Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
600
49
2
Volts
Amps
0.125 Ohms
25
µA
250
±100 nA
4 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com


APL602B2G Datasheet
Recommendation APL602B2G Datasheet
Part APL602B2G
Description LINEAR MOSFET
Feature APL602B2G; APL602B2(G) APL602L(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 600V 49A 0.125Ω LINEAR M.
Manufacture Advanced Power Technology
Datasheet
Download APL602B2G Datasheet




Advanced Power Technology APL602B2G
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 300V
ID = 49A @ 25°C
RG = 0.6
APL602B2-L(G) 
MIN TYP MAX UNIT
7485 9000
1290 1810
617 930
pF
13 26
27 54 ns
56 84
16 20
MIN TYP MAX UNIT
.17
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 2.50mH, RG = 25, Peak IL = 49A
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18
0.16 0.9
0.14
0.12 0.7
0.10
0.08
0.06
0.04
0.02
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction
temp. ( ”C)
Power
(Watts)
Case temperature
RC MODEL
0.0575
0.113
0.0187F
0.358F
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL



Advanced Power Technology APL602B2G
Typical Performance Curves
120
VGS=10V, 15 V
100
8V
80
7.5 V
60
7V
40 6.5 V
6V
20
5.5 V
0
0 50 100 150 200 250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
80
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
20 TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0 2 4 6 8 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
APLA6P0L26B022-BL2(G-L)
120
VGS=10, 15V
100
8V
80
7.5 V
60
7V
40 6.5 V
20 6 V
5.5 V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
1.30
1.20
NORMALIZED TO
VGS = 10V @ 29A
VGS=10V
1.10
1.00
0.90
0.80 VGS=20V
0.70
0 20 40 60 80 100 120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)