LINEAR MOSFET. APL502LG Datasheet

APL502LG MOSFET. Datasheet pdf. Equivalent


Microsemi APL502LG
APL502B2(G)
APL502L(G)
500V, 58A, 0.090Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
T-MaxTM
TO-264
• Higher FBSOA
• Popular T-MAX™ or TO-264 Package
• Higher Power Dissipation
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specied.
Symbol Parameter
APL502B2_L (G)
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
500
58
232
±30
±40
730
5.84
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
58
50
3000
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 29A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
500
58
2
0.09
25
250
±100
4
Volts
Amps
Ohms
μA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com


APL502LG Datasheet
Recommendation APL502LG Datasheet
Part APL502LG
Description LINEAR MOSFET
Feature APL502LG; APL502B2(G) APL502L(G) 500V, 58A, 0.090Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. LINEAR.
Manufacture Microsemi
Datasheet
Download APL502LG Datasheet




Microsemi APL502LG
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Symbol Characteristic
RqJC Junction to Case
WT Package Weight
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 250V
ID = 29A @ 25°C
RG = 0.6W
APL502B2_L(G)
MIN TYP MAX UNIT
7485 9000
1290 1810 pF
617 930
13 26
27 54
ns
56 84
16 20
MIN TYP MAX UNIT
.17 °C/W
0.22
oz
5.9 g
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.18
0.16
0.14
0.12
D = 0.9
0.7
0.10
0.08
0.5
0.06
0.3
0.04
0.02
0.1
0.05
0
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION



Microsemi APL502LG
Typical Performance Curves
120 VGS=10V, 15 V
100
8V
80
7.5 V
60
7V
40 6.5 V
20 6 V
5.5 V
0
0 50 100 150 200 250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
80
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
20 TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0 2 4 6 8 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 29A
VGS = 12V
2.0
1.5
1.0
0.5
0.0 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APL502B2_L(G)
120
VGS=10, 15V
100
8V
80
7.5 V
60
7V
40 6.5 V
20 6 V
5.5 V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
1.30
NORMALIZED TO
1.20
VGS = 10V @ 29A
1.10
VGS=10V
1.00
0.90
0.80
VGS=20V
0.70
0 20 40 60 80 100 120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE





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