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Power-Transistor. BSC110N06NS3G Datasheet

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Power-Transistor. BSC110N06NS3G Datasheet






BSC110N06NS3G Power-Transistor. Datasheet pdf. Equivalent




BSC110N06NS3G Power-Transistor. Datasheet pdf. Equivalent





Part

BSC110N06NS3G

Description

Power-Transistor



Feature


Type OptiMOSTM3 Power-Transistor Featur es • Ideal for high frequency switchi ng and sync. rec. • Optimized technol ogy for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance • N-cha nnel, normal level • 100% avalanche t ested • Pb-free plating; RoHS complia nt • Qualified according to JEDEC1) f or target applications • Halogen-f.
Manufacture

Infineon Technologies

Datasheet
Download BSC110N06NS3G Datasheet


Infineon Technologies BSC110N06NS3G

BSC110N06NS3G; ree according to IEC61249-2-21 Type BS C110N06NS3 G BSC110N06NS3 G Product S ummary VDS RDS(on),max ID 60 V 11 mW 5 0 A Package PG-TDSON-8 Marking 110N 06NS Maximum ratings, at T j=25 °C, u nless otherwise specified Parameter S ymbol Conditions Continuous drain curr ent I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Value 50 33 Unit A V GS=10 V, T C=25 °C, R.


Infineon Technologies BSC110N06NS3G

thJA =50K/W2) 12 Pulsed drain current 3) I D,pulse T C=25 °C 200 Avalanch e energy, single pulse4) E AS I D=50 A, R GS=25 W 22 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection . PCB is vertical in still air. 3) See figure 3 for more det.


Infineon Technologies BSC110N06NS3G

ailed information 4) See figure 13 for m ore detailed information Rev.2.4 page 1 2013-05-21 Maximum ratings, at T j =25 °C, unless otherwise specified Pa rameter Symbol Conditions Power dissi pation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2) Operating and storage t emperature T j, T stg IEC climatic cat egory; DIN IEC 68-1 BSC110N06NS3 G Va lue 50 2.5 -55 ... 15.

Part

BSC110N06NS3G

Description

Power-Transistor



Feature


Type OptiMOSTM3 Power-Transistor Featur es • Ideal for high frequency switchi ng and sync. rec. • Optimized technol ogy for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance • N-cha nnel, normal level • 100% avalanche t ested • Pb-free plating; RoHS complia nt • Qualified according to JEDEC1) f or target applications • Halogen-f.
Manufacture

Infineon Technologies

Datasheet
Download BSC110N06NS3G Datasheet




 BSC110N06NS3G
Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC110N06NS3 G
BSC110N06NS3 G
Product Summary
VDS
RDS(on),max
ID
60 V
11 mW
50 A
Package
PG-TDSON-8
Marking
110N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
50
33
Unit
A
V GS=10 V, T C=25 °C,
R thJA =50K/W2)
12
Pulsed drain current3)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
22 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.4
page 1
2013-05-21




 BSC110N06NS3G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC110N06NS3 G
Value
50
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area2)
-
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=23 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=50 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
60
2
-
-
-
-
-
25
- 2.5 K/W
- 62
- 50
- -V
34
0.1 1 µA
10 100
10 100 nA
9.0 11 mW
1.3 - W
50 - S
Rev.2.4
page 2
2013-05-21




 BSC110N06NS3G
Parameter
Symbol Conditions
BSC110N06NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=50 A, R G,ext=3 W
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q g(th)
Q gd V DD=30 V, I D=50 A,
Q sw V GS=0 to 10 V
Qg
V plateau
Q oss
V DD=30 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=50 A,
T j=25 °C
t rr V R=30 V, I F=50A ,
Q rr di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2000
440
17
10
77
14
6
2700 pF
590
-
- ns
-
-
-
12 - nC
6-
3-
8-
25 33
5.9 - V
20 27
- 53 A
- 212
0.95 1.2 V
36 - ns
38 - nC
Rev.2.4
page 3
2013-05-21



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