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Power-Transistor. BSC440N10NS3G Datasheet

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Power-Transistor. BSC440N10NS3G Datasheet






BSC440N10NS3G Power-Transistor. Datasheet pdf. Equivalent




BSC440N10NS3G Power-Transistor. Datasheet pdf. Equivalent





Part

BSC440N10NS3G

Description

Power-Transistor



Feature


$(*'#$%TM3 Power-Transistor Features : % 07*- 5 '!2% # (!0'% &- 0()'( &0% /3% , # 7!..*)# !2)- ,1 :  .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- , :  # (!,,% * , - 0+ !**% 4% * :  6# % **% ,2 '!2% # ( !0'% 6R DS(on) product (FOM) : % 07*- 5 - , 0% 1)12!,# % R DS(on) :  9 - .% 0!2),' 2% + .% 0!230% :  " &0% % *% !$ .*!2),'  -   # - + .*)!,2 :  3!*)&)% $ !# # - .
Manufacture

Infineon Technologies

Datasheet
Download BSC440N10NS3G Datasheet


Infineon Technologies BSC440N10NS3G

BSC440N10NS3G; 0$ ),' 2-      1) for target applic ation :  !*- '% , &0% % !# # - 0$ ),' 2-     BSC440N10NS3 G Product Summary VDS RDS(on),max ID 100 V 44 m# 18 A PG-TDSON-8 Type BSC 440N10NS3 G Package PG-TDSON-8 Markin g 440N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parame ter Symbol Conditions Continuous drai n current I D T C=.


Infineon Technologies BSC440N10NS3G

25 °C T C=100 °C T A=25 °C, R thJA= 50 K/W2) Pulsed drain current3) I D,p ulse T C=25 °C Avalanche energy, sing le pulse E AS I D=12 A, R GS=25 # Gat e source voltage V GS Power dissipati on P tot T C=25 °C Operating and sto rage temperature T j, T stg IEC climat ic category; DIN IEC 68-1 Value 18 11 5.3 72 18 ±20 29 -55 ... 150 55/150/56 Unit A mJ V W °C Rev..


Infineon Technologies BSC440N10NS3G

2.4 page 1 2009-10-30 Parameter Sym bol Conditions Thermal characteristics Thermal resistance, junction - case T hermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) El ectrical characteristics, at T j=25 °C , unless otherwise specified BSC440N10 NS3 G min. Values typ. Unit max. - - 4.3 K/W - - 50 Static characteristic s Drain-source brea.

Part

BSC440N10NS3G

Description

Power-Transistor



Feature


$(*'#$%TM3 Power-Transistor Features : % 07*- 5 '!2% # (!0'% &- 0()'( &0% /3% , # 7!..*)# !2)- ,1 :  .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- , :  # (!,,% * , - 0+ !**% 4% * :  6# % **% ,2 '!2% # ( !0'% 6R DS(on) product (FOM) : % 07*- 5 - , 0% 1)12!,# % R DS(on) :  9 - .% 0!2),' 2% + .% 0!230% :  " &0% % *% !$ .*!2),'  -   # - + .*)!,2 :  3!*)&)% $ !# # - .
Manufacture

Infineon Technologies

Datasheet
Download BSC440N10NS3G Datasheet




 BSC440N10NS3G
$(*'#$%TM3 Power-Transistor
Features
: % 07*- 5 '!2% # (!0'% &- 0()'( &0% /3% ,# 7!..*)# !2)- ,1
:  .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- ,
:  # (!,,% * ,- 0+ !**% 4% *
:  6# % **% ,2 '!2% # (!0'% 6R DS(on) product (FOM)
: % 07*- 5 - , 0% 1)12!,# % R DS(on)
:  9 - .% 0!2),' 2% + .% 0!230%
:  " &0% % *% !$ .*!2),'  -   # - + .*)!,2
:  3!*)&)% $ !# # - 0$ ),' 2-      1) for target application
:  !*- '% , &0% % !# # - 0$ ),' 2-    
BSC440N10NS3 G
Product Summary
VDS
RDS(on),max
ID
100 V
44 m#
18 A
PG-TDSON-8
Type
BSC440N10NS3 G
Package
PG-TDSON-8
Marking
440N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=12 A, R GS=25 #
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
18
11
5.3
72
18
±20
29
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.4
page 1
2009-10-30




 BSC440N10NS3G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
BSC440N10NS3 G
min.
Values
typ.
Unit
max.
- - 4.3 K/W
- - 50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=12 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
100
2
-
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=12 A
V GS=6 V, I D=6 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=12 A
-
-
-
-
-
8
-
2.7
0.01
10
1
38
48.3
0.8
15
-V
3.5
1 µA
100
100 nA
44 m#
86
-#
-S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 2.4
page 2
2009-10-30




 BSC440N10NS3G
Parameter
Symbol Conditions
BSC440N10NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=6 A, R G=1.6 #
-
-
-
-
-
-
-
610 810 pF
120 160
6-
9 - ns
3-
13 -
3-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 2.7 - nC
Q gd
Q sw
Qg
V DD=50 V, I D=6 A,
V GS=0 to 10 V
- 1.3 -
- 2.2 -
- 8.1 10.8
V plateau
- 4.5 - V
Q oss
V DD=50 V, V GS=0 V
-
12 16 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=18 A,
T j=25 °C
t rr V R=50 V, I F=6 A,
Q rr di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
- - 18 A
- - 72
- 0.9 1.2 V
- 44 - ns
- 61 - nC
Rev. 2.4
page 3
2009-10-30



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