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Power-Transistor. SPP08P06PH Datasheet

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Power-Transistor. SPP08P06PH Datasheet






SPP08P06PH Power-Transistor. Datasheet pdf. Equivalent




SPP08P06PH Power-Transistor. Datasheet pdf. Equivalent





Part

SPP08P06PH

Description

Power-Transistor



Feature


SPP08P06P H SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resist ance RDS(on) 0.3 W Continuous drain cu rrent ID -8.8 A · 175°C operating t emperature • Pb-free lead plating; R oHS compliant ° Halogen-free accordin g to IEC61249-2-21 ° Qualif.
Manufacture

Infineon Technologies

Datasheet
Download SPP08P06PH Datasheet


Infineon Technologies SPP08P06PH

SPP08P06PH; ied according to AEC Q101 Type SPP08P06 P H Package PG-TO220-3 Pin 1 PIN 2/4 PIN 3 GDS Maximum Ratings,at Tj = 25 C, unless otherwise specified Paramet er Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drai n current TC = 25 °C ID puls Avalanc he energy, single pulse ID = -8.8 A , V DD = -25 V, RGS = 25 W EAS Avalanche energy, periodic limit.


Infineon Technologies SPP08P06PH

ed by Tjmax Reverse diode dv/dt EAR dv/ dt IS = -8.8 A, VDS = -48 , di/dt = 20 0 A/µs, Tjmax = 175 °C Gate source v oltage Power dissipation TC = 25 °C Op erating and storage temperature IEC cli matic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Value -8.8 -6.2 -35.2 70 4.2 6 ±20 42 -55...+175 55/175/56 Unit A mJ kV/µs V W °C Rev 1.6 Page 1 20 11-08-31 SPP08P06P H T.


Infineon Technologies SPP08P06PH

hermal Characteristics Parameter Charact eristics Thermal resistance, junction - case Thermal resistance, junction - am bient, leaded SMD version, device on PC B: @ min. footprint @ 6 cm2 cooling are a 1) Symbol Values Unit min. typ. m ax. RthJC RthJA RthJA - - 3.6 K/W - - 62 - - 62 - - 40 Electrical Character istics, at Tj = 25 °C, unless otherwis e specified Parame.

Part

SPP08P06PH

Description

Power-Transistor



Feature


SPP08P06P H SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resist ance RDS(on) 0.3 W Continuous drain cu rrent ID -8.8 A · 175°C operating t emperature • Pb-free lead plating; R oHS compliant ° Halogen-free accordin g to IEC61249-2-21 ° Qualif.
Manufacture

Infineon Technologies

Datasheet
Download SPP08P06PH Datasheet




 SPP08P06PH
SPP08P06P H
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
SPP08P06P H
Package
PG-TO220-3
Pin 1 PIN 2/4 PIN 3
GDS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-8.8
-6.2
-35.2
70
4.2
6
±20
42
-55...+175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.6
Page 1
2011-08-31




 SPP08P06PH
SPP08P06P H
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 3.6 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -250 µA
Gate threshold voltage, VGS = VDS
ID = -250 µA, Tj = 25 °C
Zero gate voltage drain current
VDS = -60 V, VGS = 0 V, Tj = 25 °C
VDS = -60 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -10 V, ID = -6.2 A
V(BR)DSS -60
-
-
VGS(th) -2.1
-3
-4
IDSS
IGSS
- -0.1 -1
- -10 -100
- -10 -100
RDS(on) - 0.23 0.3
Unit
V
µA
nA
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.6
Page 2
2011-08-31




 SPP08P06PH
SPP08P06P H
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Unit
Dynamic Characteristics
Transconductance
VDS³2*ID*RDS(on)max , ID = -6.2 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Rise time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Fall time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
gfs
Ciss
Coss
Crss
td(on)
1.5 3.6
-S
- 335 420 pF
- 105 135
- 65 95
- 16 24 ns
tr - 46 69
td(off)
- 48 72
tf - 14 21
Rev 1.6
Page 3
2011-08-31



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