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bridge inverter. SKiiP22NAB12 Datasheet

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bridge inverter. SKiiP22NAB12 Datasheet






SKiiP22NAB12 inverter. Datasheet pdf. Equivalent




SKiiP22NAB12 inverter. Datasheet pdf. Equivalent





Part

SKiiP22NAB12

Description

3-phase bridge rectifier + braking chopper + 3-phase bridge inverter



Feature


SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Abs olute Maximum Ratings Symbol Conditions 1) Inverter & Chopper VCES VGES IC I CM IF = –IC IFM = –ICM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Bridge Re ctifier VRRM ID IFSM I2t Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, .
Manufacture

Semikron International

Datasheet
Download SKiiP22NAB12 Datasheet


Semikron International SKiiP22NAB12

SKiiP22NAB12; Tj = 25 °C Tj Tstg Visol AC, 1 min. Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Charac teristics Symbol Conditions 1) IGBT - Inverter & Chopper VCEsat td(on) tr td (off) tf Eon + Eoff Cies Rthjh IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V IC = 15 A; Tj = 125.


Semikron International SKiiP22NAB12

°C Rgon = Rgoff = 82 Ω inductive loa d VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Diode 2) - Inverter & Chopper VF = V EC VTO rT IRRM Qrr Eoff Rthjh IF = 15 A Tj = 25 (125) °C Tj = 125 °C Tj = 1 25 °C IF = 15 A, VR = – 600 V diF/dt = – 400 A/µs VGE = 0 V, Tj = 125 ° C per diode Diode - Rectifier VF Rthj h IF = 35 A, Tj = 25 °C per diode Te mperature Sensor RTS T = 25 / .


Semikron International SKiiP22NAB12

100 °C Shunts (SKiiP 22 NAB 12 I) Rcs (dc) 5 % 4) Rcs(ac) 1% Mechanical D ata M1 Case case to heatsink, SI Unit s mechanical outline see page B 16 – 8 min. typ. max. Units – 2,5(3,1) 3, 0(3,7) V – 55 110 ns – 45 90 ns – 400 600 ns – 70 100 ns – 4,0 – m J – 1,0 – nF – – 1,4 K/W – 2 ,0(1,8) 2,5(2,3) V – 1,0 1,2 V – 53 73 mΩ – 16 – A – 2,7 – µC – 0,6 – mJ – – 1,7 K/W.

Part

SKiiP22NAB12

Description

3-phase bridge rectifier + braking chopper + 3-phase bridge inverter



Feature


SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Abs olute Maximum Ratings Symbol Conditions 1) Inverter & Chopper VCES VGES IC I CM IF = –IC IFM = –ICM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Bridge Re ctifier VRRM ID IFSM I2t Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, .
Manufacture

Semikron International

Datasheet
Download SKiiP22NAB12 Datasheet




 SKiiP22NAB12
SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I
Absolute Maximum Ratings
Symbol Conditions 1)
Inverter & Chopper
VCES
VGES
IC
ICM
IF = –IC
IFM = –ICM
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Bridge Rectifier
VRRM
ID
IFSM
I2t
Theatsink = 80 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
Tj
Tstg
Visol
AC, 1 min.
Values
1200
± 20
23 / 15
46 / 30
24 / 17
48 / 34
1500
25
700
2400
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A2s
°C
°C
V
Characteristics
Symbol Conditions 1)
IGBT - Inverter & Chopper
VCEsat
td(on)
tr
td(off)
tf
Eon + Eoff
Cies
Rthjh
IC = 15 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 15 A; Tj = 125 °C
Rgon = Rgoff = 82
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
Diode 2) - Inverter & Chopper
VF = VEC
VTO
rT
IRRM
Qrr
Eoff
Rthjh
IF = 15 A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 15 A, VR = – 600 V
diF/dt = – 400 A/µs
VGE = 0 V, Tj = 125 °C
per diode
Diode - Rectifier
VF
Rthjh
IF = 35 A, Tj = 25 °C
per diode
Temperature Sensor
RTS T = 25 / 100 °C
Shunts (SKiiP 22 NAB 12 I)
Rcs(dc)
5 % 4)
Rcs(ac)
1%
Mechanical Data
M1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 – 8
min. typ. max. Units
– 2,5(3,1) 3,0(3,7) V
– 55 110 ns
– 45 90 ns
– 400 600 ns
– 70 100 ns
– 4,0 – mJ
– 1,0 – nF
– – 1,4 K/W
– 2,0(1,8) 2,5(2,3) V
– 1,0 1,2 V
– 53 73 m
– 16 – A
– 2,7 – µC
– 0,6 – mJ
– – 1,7 K/W
– 1,2 – V
– – 1,6 K/W
1000 / 1670
16,5
10
m
m
2 – 2,5 Nm
M2
MiniSKiiP 2
SEMIKRON integrated
intelligent Power
SKiiP 22 NAB 12
SKiiP 22 NAB 12 I 3)
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M2
UL recognized file no. E63532
specification of shunts and
temperature sensor see part A
common characteristics see
page B 16 – 4
1) Theatsink = 25 °C, unless
otherwise specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
3) With integrated DC and/or AC
shunts
4) accuracy of pure shunt, please
note that for DC shunt no
separate sensing contact is
used.
© by SEMIKRON
000131
B 16 – 53




 SKiiP22NAB12
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
5
mWs
4
3
2
22NA1203.xls
Eon
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
RG = 52
Eoff
1
E
0
0 IC
10
20 A
Fig. 3 Turn-on /-off energy = f (IC)
30
ICpuls = 15 A
22NA1204.xls
5 Tj = 125 °C
mWs VCE = 600 V
4 VGE = ± 15 V
IC = 15 A
3 Eon
2
Eoff
1
E
0
0 RG
50
100 150
Fig. 4 Turn-on /-off energy = f (RG)
VGE = 0 V
f = 1 MHz
Fig. 5 Typ. gate charge characteristic
B 16 – 54
Fig. 6 Typ. capacitances vs. VCE
000131
© by SEMIKRON




 SKiiP22NAB12
MiniSKiiP 1200 V
ICop / IC
1.2
1.0
Mini1207
Tj = 150 °C
VGE = 15 V
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC
2,5
Mini1209
Tj = 150 °C
VGE = ± 15 V
2
1,5
1
0,5
ICsc/ICN
12
10
8
Note:
*Allowed numbers of
6
short circuit:<1000
*Time between short
circuit:>1s
4
2
Mini1210
Tj = 150 °C
VGE = ± 15 V
tsc = 10 µs
Lext < 25 nH
0
0
500
1000
1500
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
0
0
500
1000
1500
VCE [V]
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
B 16 – 4
0698
© by SEMIKRON



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