Power Transistor. IPI030N10N3G Datasheet

IPI030N10N3G Transistor. Datasheet pdf. Equivalent


Infineon Technologies IPI030N10N3G
IPP030N10N3 G IPI030N10N3 G
OptiMOS3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP030N10N3 G IPI030N10N3 G
100 V
3 mW
100 A
Package
Marking
PG-TO220-3
030N10N
PG-TO262-3
030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
100
100
400
1000
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2011-07-18


IPI030N10N3G Datasheet
Recommendation IPI030N10N3G Datasheet
Part IPI030N10N3G
Description Power Transistor
Feature IPI030N10N3G; IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.
Manufacture Infineon Technologies
Datasheet
Download IPI030N10N3G Datasheet




Infineon Technologies IPI030N10N3G
IPP030N10N3 G IPI030N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=275 µA
2
2.7 3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=100 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=100 A
-
2.6
3 mW
V GS=6 V, I D=50 A
- 3.1 4.8
Gate resistance
RG
- 1.9 - W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
94
188
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2011-07-18



Infineon Technologies IPI030N10N3G
IPP030N10N3 G IPI030N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=100 A, R G=1.6 W
-
-
-
-
-
-
-
11100 14800 pF
1940 2580
69 -
34 - ns
58 -
84 -
28 -
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
Qg
V DD=50 V, I D=100 A,
V GS=0 to 10 V
V plateau
Q oss
V DD=50 V, V GS=0 V
-
-
-
-
-
-
49 - nC
28 -
43 -
155 206
4.4 - V
205 273 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 100 A
- - 400
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
1 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=50 V, I F=I S ,
Q rr di F/dt =100 A/µs
- 86 - ns
- 232 - nC
4) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2011-07-18







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