8-CHANNEL MULTIPLEXER. TC74HC151AFN Datasheet
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
The TC74HC151A is a high speed CMOS 8-CHANNEL
MULTIPLEXER fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
One of eight date input signals (D0-D7) is selected by decoding
of the three-bit address input (A, B, C). The selected data appears
on two outputs: non-inverting (Y) and inverting (W).
The strobe input provides two output conditions; a low level on
the strobe input transfers the selected data to the outputs. A high
level on the strobe input sets the Y output low and the W output
high without regard to the data or select input conditions.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
• High speed: tpd = 15 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Output drive capability: 10 LSTTL loads
• Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
• Balanced propagation delays: tpLH ∼− tpHL
• Wide operating voltage range: VCC (opr) = 2 to 6 V
• Pin and function compatible with 74LS151
: 1.00 g (typ.)
: 0.18 g (typ.)
Start of commercial production
IEC Logic Symbol
X: Don’t care
Absolute Maximum Ratings (Note 1)
Supply voltage range
−0.5 to 7
DC input voltage
−0.5 to VCC + 0.5
DC output voltage
−0.5 to VCC + 0.5
Input diode current IIK ±20 mA
Output diode current
DC output current
DC VCC/ground current
500 (DIP) (Note 2)/180 (SOP)
−65 to 150
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.