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B1353

Part Number	B1353
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Nov 14, 2015
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdow...
Datasheet	B1353 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.
5 A 1.
8 W 20 150 ℃ -55~150 ℃ Product Specification 2SB1353 isc website：www.
iscsemi.
cn 1 INCHA...

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