Power MOSFET. IRF830L Datasheet

IRF830L MOSFET. Datasheet pdf. Equivalent

IRF830L Datasheet
Recommendation IRF830L Datasheet
Part IRF830L
Description Power MOSFET
Feature IRF830L; www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY.
Manufacture Vishay
Datasheet
Download IRF830L Datasheet




Vishay IRF830L
www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
38
5.0
22
Single
I2PAK (TO-262)
D2PAK (TO-263)
1.5
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF830S-GE3
IRF830SPbF
D2PAK (TO-263)
SiHF830STRL-GE3 a
IRF830STRLPbF a
I2PAK (TO-262)
SiHF830L-GE3
IRF830LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).
d. ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
500
± 20
4.5
2.9
18
0.59
0.025
280
4.5
7.4
74
3.1
3.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF830L
www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.7 Ab
VDS = 50 V, ID = 2.7 Ab
500 -
-V
- 0.61 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.5
2.5 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.1 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 3.1 A,
Rg = 12 , RD = 79 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
610 -
160 - pF
68 -
- 38
- 5.0 nC
- 22
8.2 -
16 -
ns
42 -
16 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 4.5
A
- - 18
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 320 640 ns
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μsb
-
1.0 2.0 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF830L
www.vishay.com
IRF830S, SiHF830S, IRF830L, SiHF830L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom 4.5 V
4.5 V
10-1
91064_01
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom 4.5 V
4.5 V
10-1
91064_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
101
150 °C
25 °C
100
10-1
91064_03
4
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 3.1 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91064_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1500
1250
1000
750
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
500
250
0
100
91064_05
Coss
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 3.1 A
16 VDS = 400 V
VDS = 250 V
12 VDS = 100 V
8
4
0
0
91064_06
For test circuit
see figure 13
8 16 24 32 40
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-1659-Rev. D, 20-Jul-15
3
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)