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Power MOSFET. IRF830AS Datasheet |
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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
24
6.3
11
Single
1.40
I2PAK
(TO-262)
D2PAK
(TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF830AS-GE3
IRF830ASPbF
SiHF830AS-E3
D2PAK (TO-263)
SiHF830ASTRL-GE3a
IRF830ASTRLPbFa
SiHF830ASTL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TA = 25 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 18 mH, Rg = 25 , IAS = 5.0 A (see fig. 12).
c. ISD 5.0 A, dI/dt 370 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses SiHF830A data and test conditions.
I2PAK (TO-262)
SiHF830AL-GE3a
IRF830ALPbF
SiHF830AL-E3
LIMIT
500
± 30
5.0
3.2
20
0.59
230
5.0
7.4
3.1
74
5.3
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91062
S11-1049-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.0 Ab
VDS = 50 V, ID = 3.0 Ad
500 -
-V
- 0.60 - V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.4
2.8 -
-S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc, d
VGS = 10 V
ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b, d
VDD = 250 V, ID = 5.0 A,
Rg = 14 , RD = 49 , see fig. 10b, d
-
-
-
-
-
-
-
-
-
-
-
-
-
620 -
93 - pF
4.3 -
886 -
27 -
39 -
- 24
- 6.3 nC
- 11
10 -
21 -
ns
21 -
15 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 5.0
A
- - 20
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb, d
-
430 650 ns
Qrr - 2.0 3.0 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses SiHF830A data and test conditions.
www.vishay.com
2
Document Number: 91062
S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102 VGS
Top 15 V
10 V
10
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1 Bottom 4.5 V
0.1
10-2
0.1
91062_01
4.5 V
20 µs Pulse Width
TJ = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
10
TJ = 150 °C
TJ = 25 °C
1
0.1
4.0
91062_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
8.0 V
10
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
1
91062_02
20 µs Pulse Width
TJ = 150 °C
10 102
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
2.5
ID = 5.0 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91062_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91062
S11-1049-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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