Power MOSFET. SiHF630S Datasheet

SiHF630S MOSFET. Datasheet pdf. Equivalent


Vishay SiHF630S
Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
43
7.0
23
Single
0.40
D2PAK (TO-263)
K
DS
G
D
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630S-GE3
SiHF630STRL-GE3a
Lead (Pb)-free
IRF630SPbF
SiHF630S-E3
IRF630STRLPbFa
SiHF630STL-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
TC = 25 °C
VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dtc
EAS
IAR
EAR
PD
dV/dt
D2PAK (TO-263)
SiHF630STRR-GE3a
IRF630STRRPbFa
SiHF630STR-E3a
LIMIT
200
± 20
9.0
5.7
36
0.59
0.025
250
9.0
7.4
74
3.0
5.0
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHF630S Datasheet
Recommendation SiHF630S Datasheet
Part SiHF630S
Description Power MOSFET
Feature SiHF630S; Power MOSFET IRF630S, SiHF630S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC.
Manufacture Vishay
Datasheet
Download SiHF630S Datasheet




Vishay SiHF630S
IRF630S, SiHF630S
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).
c. ISD 9.0 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
.
LIMIT
- 55 to + 150
300d
UNIT
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)c
RthJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
40
62
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.4 Ab
VDS = 50 V, ID = 5.4 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.9 A, VDS = 160 V
see fig. 6 and 13b
VDD = 100 V, ID = 5.9 A
Rg = 12 , RD= 16
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
MIN.
200
-
2.0
-
-
-
-
3.8
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.24 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 0.40
- -S
800 -
240 - pF
76 -
- 43
- 7.0 nC
- 23
9.4 -
28 -
ns
39 -
20 -
4.5 -
nH
7.5 -
www.vishay.com
2
Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF630S
IRF630S, SiHF630S
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Body Diode Characteristics
MIN. TYP. MAX. UNIT
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D - - 9.0
Pulsed Diode Forward Currenta
integral reverse
A
G
ISM p - n junction diode
S - - 36
Body Diode Voltage
VSD
TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 5.9 A,
dI/dt = 100 A/μsb
- 170 340 ns
- 1.1 2.2 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
Top 15 V
10 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
4.5 V
10-1
10-1
91032_01
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
VGS
Top 15 V
10 V
101 8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
4.5 V
10-1
10-1
91032_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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