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Power MOSFET. IRFBF20L Datasheet |
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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
900
VGS = 10 V
38
Qgs (nC)
4.7
Qgd (nC)
21
Configuration
Single
8.0
D
I2PAK (TO-262) D2PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBF20S, SiHFBF20S)
• Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
• Available in Tape and Reel (IRFBF20S, SiHFBF20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capabel of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L, SiHFBF20L) is available for
low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBF20S-GE3
Lead (Pb)-free
Note
IRFBF20SPbF
SiHFBF20S-E3
a. See device orientation.
D2PAK (TO-263)
SiHFBF20STRL-GE3a
IRFBF20STRLPbFa
SiHFBF20STL-E3a
D2PAK (TO-263)
SiHFBF20STRR-GE3a
IRFBF20STRRPbFa
SiHFBF20STR-E3a
I2PAK (TO-262)
SiHFBF20L-GE3
IRFBF20LPbF
SiHFBF20L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagee
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Currenta,e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 1.7 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBF20, SiHFBF20 data and test conditions.
LIMIT
900
± 20
1.7
1.1
6.8
0.43
180
1.7
5.4
54
3.1
1.5
- 55 to + 150
300d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
MAX.
40
2.3
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VDS/TJ
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VDS = 900 V, VGS = 0 V
VDS = 720 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 50 V, ID = 1.0 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 1.7 A, VDS = 360 V,
see fig. 6 and 13b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 450 V, ID = 1.7 A,
Rg = 18 , VGS = 10 V, see fig. 10b
Fall Time
tf
MIN.
900
-
2.0
-
-
-
-
0.6
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
TYP. MAX. UNIT
- -V
1.1 - mV/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 8.0
- -S
490 -
55 - pF
18 -
- 38
- 4.7 nC
- 21
8.0 -
21 -
ns
56 -
32 -
www.vishay.com
2
Document Number: 91121
S11-1053-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 1.7
A
- - 6.8
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
- - 1.5 V
trr
- 350 530 ns
TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/μsb
Qrr
-
0.85 1.3
μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBF20/SiHFBF20 data and test conditions.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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