Power MOSFET. IRFL014 Datasheet

IRFL014 MOSFET. Datasheet pdf. Equivalent

IRFL014 Datasheet
Recommendation IRFL014 Datasheet
Part IRFL014
Description Power MOSFET
Feature IRFL014; www.vishay.com IRFL014, SiHFL014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (.
Manufacture Vishay
Datasheet
Download IRFL014 Datasheet




Vishay IRFL014
www.vishay.com
IRFL014, SiHFL014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 10 V
11
3.1
5.8
Single
0.20
D
SOT-223
D
S
D
G
Marking code: FA
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Fast switching
• Ease of paralleling
• Simple drive requirements
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHFL014-GE3
IRFL014PbF
SiHFL014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.7 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
SOT-223
SiHFL014TR-GE3 a
IRFL014TRPbF a
SiHFL014T-E3 a
LIMIT
60
± 20
2.7
1.7
22
0.025
0.017
100
3.1
2.0
4.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
S14-1685-Rev. E, 18-Aug-14
1
Document Number: 91191
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRFL014
www.vishay.com
IRFL014, SiHFL014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
MAX.
60
40
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.6 A b
VDS = 25 V, ID = 1.6 A
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 10 A, VDS = 48 V,
see fig. 6 and 13 b
VDD = 30 V, ID = 10 A,
Rg = 24 , RD = 2.7 , see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
60 -
-V
- 0.068 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.20
1.9 -
-S
- 300 -
- 160 - pF
- 29 -
- - 11
- - 3.1 nC
- - 5.8
- 10 -
- 50 -
ns
- 13 -
- 19 -
- 4.0 -
nH
- 6.0 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current a
ISM p - n junction diode
D
G
S
- - 2.7
A
- - 22
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.7 A, VGS = 0 V b
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 70 140 ns
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b - 0.20 0.40 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S14-1685-Rev. E, 18-Aug-14
2
Document Number: 91191
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRFL014
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFL014, SiHFL014
Vishay Siliconix
Fig. 1 -Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S14-1685-Rev. E, 18-Aug-14
3
Document Number: 91191
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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