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N-CHANNEL MOSFET. JCS13N50FT Datasheet

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N-CHANNEL MOSFET. JCS13N50FT Datasheet






JCS13N50FT MOSFET. Datasheet pdf. Equivalent




JCS13N50FT MOSFET. Datasheet pdf. Equivalent





Part

JCS13N50FT

Description

N-CHANNEL MOSFET



Feature


N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs= 10V) Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High efficie ncy switch mode power supplies z Electr onic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z1 00% avalanche tested zI.
Manufacture

JILIN SINO-MICROELECTRONICS

Datasheet
Download JCS13N50FT Datasheet


JILIN SINO-MICROELECTRONICS JCS13N50FT

JCS13N50FT; mproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS13N50FT-O-F-N-B Marking JCS13N50FT Package TO-220MF Halogen Free NO Packaging Tube Device Weight 2.20 g(typ) :201010B 1/8 R ABSOLUTE RA TINGS (Tc=25℃) Parameter - Dra in-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100 ( 1) Drain Current -pulse.


JILIN SINO-MICROELECTRONICS JCS13N50FT

(note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanch e Energy(note 2) EAS ( 1) Ava lanche Current (note 1) IAR ( 1 ) Repetitive Avalanche Current (not e 1) EAR ( 3) Peak Diode Recove ry dv/dt (note 3) dv/dt Power Di ssipation PD TC=25℃ -Derate above 2 5℃ Operating and Storage Temperatur e Range TJ,TSTG Maximum Lead Temperature for Soldering .


JILIN SINO-MICROELECTRONICS JCS13N50FT

Purposes TL * *Drain current limited by maximum junction temperature JCS13N 50FT Value 500 13.0* 8* 52* ±30 845 13.0 5.0 4.5 Unit V A A A V mJ A mJ V /ns 50 0.4 -55~+150 300 W W/℃ ℃ ℃ :201010B 2/8 R ELECTRICAL CH ARACTERISTIC JCS13N50FT P arameter Off –Characteristics - Dr ain-Source Voltage Breakdown Voltage T emperature Coefficient Zero Gate.

Part

JCS13N50FT

Description

N-CHANNEL MOSFET



Feature


N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs= 10V) Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High efficie ncy switch mode power supplies z Electr onic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z1 00% avalanche tested zI.
Manufacture

JILIN SINO-MICROELECTRONICS

Datasheet
Download JCS13N50FT Datasheet




 JCS13N50FT
N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS13N50FT
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
13 A
500 V
0.46Ω
37 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 25pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 25pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
封装 Package
订货信息 ORDER MESSAGE
订货型号
Order codes
JCS13N50FT-O-F-N-B
印记
Marking
JCS13N50FT
封装
Package
TO-220MF
无卤素
Halogen Free
NO
包装
Packaging
条管 Tube
器件重量
Device Weight
2.20 g(typ)
版本:201010B
1/8




 JCS13N50FT
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
符号
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
Symbol
VDSS
连续漏极电流
Drain Current -continuous
ID T=25
T=100
最大脉冲漏极电流(注 1
Drain Current -pulse note 1
IDM
最高栅源电压
Gate-Source Voltage
VGSS
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2
EAS
雪崩电流(注 1
Avalanche Current note 1
IAR
重复雪崩能量(注 1
Repetitive Avalanche Current note 1
EAR
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dt note 3
dv/dt
耗散功率
Power Dissipation
PD
TC=25
-Derate
above 25
最高结温及存储温度
Operating and Storage Temperature Range
TJTSTG
引线最高焊接温度
Maximum Lead Temperature for Soldering Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JCS13N50FT
数值
Value
500
13.0*
8*
52*
±30
845
13.0
5.0
4.5
单位
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
50
0.4
-55+150
300
W
W/
版本:201010B
2/8




 JCS13N50FT
R
电特性 ELECTRICAL CHARACTERISTIC
JCS13N50FT
项目
符号
测试条件
最小 典型 最 大单 位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
正向栅极体漏电流
Gate-body leakage current, forward
反向栅极体漏电流
Gate-body leakage current, reverse
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
静态导通电阻
Static Drain-Source On-Resistance
正向跨导
Forward Transconductance
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
Symbol
Tests conditions
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
500 - - V
ΔBVDSS ID=250μA, referenced to
/ΔTJ 25
- 0.6 - V/
IDSS
IGSSF
VDS=500V, VGS=0V, TC=25
VDS=400V, TC=125
VDS=0V, VGS =30V
-
-
-
- 1 μA
- 10 μA
- 100 nA
IGSSR VDS=0V, VGS =-30V
- - -100 nA
VGS(th) VDS = VGS , ID=250μA
3.0 - 5.0 V
RDS(ON) VGS =10V , ID=6.5A
- 0.37 0.46
gfs
VDS = 40V , ID=6.5Anote 4- 15 -
S
Ciss
Coss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 1560 2090 pF
- 210 260 pF
Crss - 25 30 pF
版本:201010B
3/8



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