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Power MOSFET. SiHF740LC Datasheet

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Power MOSFET. SiHF740LC Datasheet






SiHF740LC MOSFET. Datasheet pdf. Equivalent




SiHF740LC MOSFET. Datasheet pdf. Equivalent





Part

SiHF740LC

Description

Power MOSFET



Feature


Power MOSFET IRF740LC, SiHF740LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RD S(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Conf iguration Single 0.55 TO-220AB D S D G G S N-Channel MOSFET ORDERING IN FORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enha nced 30 V VGS Rating • Re.
Manufacture

Vishay

Datasheet
Download SiHF740LC Datasheet


Vishay SiHF740LC

SiHF740LC; duced Ciss, Coss, Crss • Extremely Hig h Frequency Operation • Repetitive Av alanche Rated • Compliant to RoHS Dir ective 2002/95/EC Available RoHS* COMP LIANT DESCRIPTION This new series of l ow charge Power MOSFETs achieve signifi cantly lower gate charge over conventio nal MOSFETs. Utilizing the new LCDMOS t echnology, the device improvements are achieved without added p.


Vishay SiHF740LC

roduct cost, allowing for reduced gate d rive requirements and total system savi ngs. In addition, reduced switching los ses and improved efficiency are achieva ble in a variety of high frequency appl ications. Frequencies of a few MHz at h igh current are possible using the new Low Charge MOSFETs. These device improv ements combined with the proven ruggedn ess and reliabilit.


Vishay SiHF740LC

y that are characteristic of Power MOSFE Ts ofter the designer a new standard in power transistors for switching applic ations. TO-220AB IRF740LCPbF SiHF740LC -E3 IRF740LC SiHF740LC ABSOLUTE MAXIMU M RATINGS (TC = 25 °C, unless otherwis e noted) PARAMETER SYMBOL Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current Pulsed Drain Currenta Linear Derating Fac.

Part

SiHF740LC

Description

Power MOSFET



Feature


Power MOSFET IRF740LC, SiHF740LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RD S(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Conf iguration Single 0.55 TO-220AB D S D G G S N-Channel MOSFET ORDERING IN FORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enha nced 30 V VGS Rating • Re.
Manufacture

Vishay

Datasheet
Download SiHF740LC Datasheet




 SiHF740LC
Power MOSFET
IRF740LC, SiHF740LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
400
VGS = 10 V
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
0.55
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs ofter the designer a new standard in power
transistors for switching applications.
TO-220AB
IRF740LCPbF
SiHF740LC-E3
IRF740LC
SiHF740LC
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD 10 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 30
10
6.3
32
1.0
520
10
13
125
4.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 SiHF740LC
IRF740LC, SiHF740LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = 10 A, VDS = 320 V
Qgs
VGS = 10 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 200 V, ID = 10 A ,
Rg = 9.1 Ω, RD = 20 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
MIN.
400
-
2.0
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.76 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
-
0.55
Ω
- -S
1100
190
18
-
-
-
11
31
25
20
4.5
-
-
-
39
10
19
-
-
-
-
-
7.5 -
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 10
A
- - 32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
-
380 570 ns
Qrr - 2.8 4.2 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 SiHF740LC
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF740LC, SiHF740LC
Vishay Siliconix
Top
101
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100 5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-2
91053_01
20 µs Pulse Width
TC = 25 °C
10-1 100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
150 °C
100
25 °C
10-1
10-2
4
91053_03
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100 5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-2
91053_02
20 µs Pulse Width
TC = 150 °C
10-1 100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 10 A
2.5 VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91053_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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