N-Channel MOSFET. APM1105NU Datasheet

APM1105NU MOSFET. Datasheet pdf. Equivalent

APM1105NU Datasheet
Recommendation APM1105NU Datasheet
Part APM1105NU
Description N-Channel MOSFET
Feature APM1105NU; APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ES.
Manufacture Sinopower
Datasheet
Download APM1105NU Datasheet




Sinopower APM1105NU
APM1105NU
Features
· 100V/16A,
RDS(ON)= 100mW (max.) @ VGS=10V
RDS(ON)= 170mW (max.) @ VGS=4.5V
· ESD Protected
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of TO-252-3
D
Applications
G
· Power Management in TV Inverter.
S
N-Channel MOSFET
Ordering and Marking Information
APM1105N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
APM1105N U : APM1105N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2014
1
www.sinopowersemi.com



Sinopower APM1105NU
APM1105NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single Pulsed (L=0.3mH)
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
®
Rating
100
±20
175
-55 to 175
5
64
44
16
11
60
30
2.5
50
30
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Sym bol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
APM1105NU
Unit
Min. Typ. Max.
VGS=0V, IDS=250mA
100 -
-
VDS=80V, VGS=0V
--1
TJ=85°C -
- 30
VDS=VGS, IDS=250mA
1.5 2 2.5
VGS=±16V, VDS=0V
- - ±10
VGS=10V, IDS=5A
- 80 100
VGS=4.5V, IDS=2A
- 130 170
V
mA
V
mA
mW
ISD=5A, VGS=0V
IDS=5A, dlSD/dt=100A/ms
0.6
33
61
0.8 1.1
47 61
87 113
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2014
2
www.sinopowersemi.com



Sinopower APM1105NU
APM1105NU
®
Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
VGS=0V,
VDS=30V,
Fr equenc y=1. 0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=50V, VGS=10V,
IDS=5A
Note a : Pulse test ; pulse width£300ms, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.
APM1105NU
Unit
Min. Typ. Max.
730 940 1250
45 80 115 pF
25 50 75
- 13 24
- 10 19 ns
- 32 60
- 16 30
12 21 30
3.4 4.9 6.4 nC
2.9 5.8 8.7
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2014
3
www.sinopowersemi.com







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