Power MOSFET. STB80PF55 Datasheet

STB80PF55 MOSFET. Datasheet pdf. Equivalent

STB80PF55 Datasheet
Recommendation STB80PF55 Datasheet
Part STB80PF55
Description P-channel Power MOSFET
Feature STB80PF55; STB80PF55 STP80PF55 P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features.
Manufacture STMicroelectronics
Datasheet
Download STB80PF55 Datasheet




STMicroelectronics STB80PF55
STB80PF55
STP80PF55
P-channel 55 V, 0.016 , 80 A TO-220, D2PAK
STripFETTM II Power MOSFET
Features
Type
STP80PF55
STB80PF55
VDSS
55V
55V
RDS(on)
<0.018
<0.018
Extremely dv/dt capability
100% avalanche tested
Application oriented characterization
ID
80A
80A
Application
Switching applications
Description
These Power MOSFETs are the latest
development of STMicroelectronics unique "single
feature size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
allowing remarkable manufacturing
reproducibility.
3
1
D2PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STP80PF55
STB80PF55
Marking
P80PF55
B80PF55
Package
TO-220
D2PAK
Packaging
Tube
Tape and reel
August 2010
Doc ID 8177 Rev 6
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www.st.com
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STMicroelectronics STB80PF55
Contents
Contents
STB80PF55, STP80PF55
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 8177 Rev 6



STMicroelectronics STB80PF55
STB80PF55, STP80PF55
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID(1) Drain current (continuous) at TC = 25°C
ID
IDM (2)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS(4)
Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area .
3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS.
4. Starting Tj=25°C, ID=80A, VDD=40V.
Value
55
±16
80
57
320
300
2
7
1.4
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Note:
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
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