Barrier Rectifier. SBL1030 Datasheet

SBL1030 Rectifier. Datasheet pdf. Equivalent

SBL1030 Datasheet
Recommendation SBL1030 Datasheet
Part SBL1030
Description Schottky Barrier Rectifier
Feature SBL1030; www.vishay.com SBL10x0, SBLF10x0, SBLB10x0 Vishay General Semiconductor Schottky Barrier Rectifier.
Manufacture Vishay
Datasheet
Download SBL1030 Datasheet




Vishay SBL1030
www.vishay.com
SBL10x0, SBLF10x0, SBLB10x0
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
ITO-220AC
SBL10x0
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
SBLF10x0
PIN 1
PIN 2
2
1
1
SBLB10x0
PIN 1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
10 A
30 V to 40 V
250 A
0.60 V
150 °C
TO-220AC, ITO-220AC, TO-263AB
Diode variations
Single
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 110 °C
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
VRRM
VRWM
VDC
IF(AV)
IFSM
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
TJ, TSTG
VAC
SBL1030
30
21
30
10
SBL1040
40
28
40
250
- 40 to + 125
1500
UNIT
V
A
°C
V
Revision: 09-Aug-13
1 Document Number: 88725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SBL1030
www.vishay.com
SBL10x0, SBLF10x0, SBLB10x0
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
VF (1)
10 A
Maximum instantaneous reverse current at DC blocking voltage
IR (2)
Rated VR
TJ = 25 °C
TJ = 100 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VALUE
0.6
1.0
50
UNIT
V
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL
Typical thermal resistance from junction to case per leg
RJC
2.0
SBLF
5.0
SBLB
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AC
SBL1030-E3/45
ITO-220AC
SBLF1030-E3/45
TO-263AB
SBLB1030-E3/45
TO-263AB
SBLB1030-E3/81
TO-220AC
SBL1030HE3/45 (1)
ITO-220AC
SBLF1030HE3/45 (1)
TO-263AB
SBLB1030HE3/45 (1)
TO-263AB
SBLB1030HE3/81 (1)
Note
(1) AEC-Q101 qualified
UNIT WEIGHT (g)
1.80
1.94
1.33
1.33
1.80
1.94
1.33
1.33
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Revision: 09-Aug-13
2 Document Number: 88725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SBL1030
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12.5
10
Resistive or Inductive Load
7.5
5
2.5
0
0 50 100 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
SBL10x0, SBLF10x0, SBLB10x0
Vishay General Semiconductor
100
10
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
300
TJ = TJ Max.
250 8.3 ms Single Half Sine-Wave
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TJ = 125 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
1
0.1
100
10
1
0.01
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Aug-13
3 Document Number: 88725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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