SCHOTTKY RECTIFIER. SB2200 Datasheet

SB2200 RECTIFIER. Datasheet pdf. Equivalent

SB2200 Datasheet
Recommendation SB2200 Datasheet
Part SB2200
Description SCHOTTKY RECTIFIER
Feature SB2200; SANGDEST MICROELECTRONICS Technical Data Data Sheet N0878, Rev. - Applications: SB2200 SCHOTTKY R.
Manufacture SANGDEST MICROELECTRONICS
Datasheet
Download SB2200 Datasheet




SANGDEST MICROELECTRONICS SB2200
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0878, Rev. -
Applications:
SB2200 SCHOTTKY RECTIFIER
z Switching power supply
z Converters
z Free-Wheeling diodes
z Reverse battery protection
z Disk drives
z Battery charging
Features:
z Schottky Barrier Chip
z Ideally Suited for Automatic Assembly
z Low Power Loss, High Efficiency
z Surge Overload Rating to 50A Peak
z For Use in Low Voltage Application
z Guard Ring Die Construction
z Plastic Case Material has UL Flammability
z Classification Rating 94V-O
z Green Products in Compliance with the RoHS Directive
z This is a Pb Free Device
z All SMC parts are traceable to the wafer lot
z Additional testing can be offered upon request
Mechanical Dimensions: In mm
SB2200
Green Products
DO-15
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn



SANGDEST MICROELECTRONICS SB2200
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0878, Rev. -
Marking Diagram:
SB2200
Green Products
CautionsMolding resin
Epoxy resin UL:94V-0
Where XXXXX is YYWWL
SB
2
200
SSG
YY
WW
L
= Device Type
= Forward Current (2A)
= Reverse Voltage (200V)
= SSG
= Year
= Week
= Lot Number
Ordering Information:
Device
SB2200
Package
DO-15
(Pb-Free)
Shipping
3000pcs / tape
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Symbol
VRWM
IF(AV)
Max. Peak One Cycle
Non-Repetitive Surge Current
IFSM
Condition
-
50% duty cycle @TC =105
rectangular wave form
8.3 ms, half Sine pulse
Max.
200
2.0
50
Units
V
A
A
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn



SANGDEST MICROELECTRONICS SB2200
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0878, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Typical Junction Capacitance
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
IR1
IR2
Cj
Condition
@ 2A, Pulse, TJ = 25
@VR = rated VR
TJ = 25
@VR = rated VR
TJ = 100
@VR = 5.0 V, Tc=25
fSIG = 1MHz
SB2200
Green Products
Max.
0.90
1.0
20
170
Units
V
mA
mA
pF
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
-
-
DC operation
-
DO-15
Specification
-55 to +150
-55 to +150
8
0.093
Units
/W
g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)