Schottky Rectifier. MBR40100CT Datasheet

MBR40100CT Rectifier. Datasheet pdf. Equivalent

MBR40100CT Datasheet
Recommendation MBR40100CT Datasheet
Part MBR40100CT
Description Dual Common Cathode High-Voltage Schottky Rectifier
Feature MBR40100CT; SEMICONDUCTOR MBR40100CT Series RRooHHSS Nell Semiconductors Dual Common Cathode High-Voltage Scho.
Manufacture Nell Semiconductors
Datasheet
Download MBR40100CT Datasheet




Nell Semiconductors MBR40100CT
SEMICONDUCTOR
MBR40100CT Series RRooHHSS
Nell Semiconductors
Dual Common Cathode High-Voltage Schottky Rectifier,
40A (20A x 2), 100V
Available
RoHS*
COMPLIANT
FEATURES
175°C TJ operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness, long
term reliability and overvoltage protection
Compliant to RoHS
Designed and qualified according to
JEDEC-JESD47
Solder bath temperature 275°C maximum,
10 s per JESD 22B-106
DESCRIPTION
The MBR40100CT Schottky rectifier has been
optimized for low reverse leakage at high
temperature. The proprietary barrier technology
allows for reliable operation up to 175°C junction
temperature.
APPLICATIONS
Switching mode power supplies
DC to DC converters
Freewheeling diodes
Reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-O
flammability rating
Terminals: Mat tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
123
TO-220AB
(MBR40100CT)
123
TO-220F
(MBRF40100CT)
CPAINS2E
PIN 1 PIN 3
PRODUCT SUMMARY
lF(AV)
20A x 2
VR 100V
VF at lF=20A
0.67V
lRM max.
11 mA at 125°C
TJ max.
175°C
Diode variation
Dual dice, common cathode
EAS 7.5 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
lF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
lFSM
tp = 8.3ms, single half sine-wave
VF 20 Apk, TJ = 125°C
TJ Range
VALUE
20 x 2
100
275
0.67
-55 to 175
UNIT
A
V
A
V
°C
VOLTAGE RATINGS
SYMBOL
PARAMETER
VR Maximum DC reverse voltage
VRWM
Maximum working peak reverse voltage
VDC Maximum DC blocking voltage
VALUE
100
UNIT
V
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Nell Semiconductors MBR40100CT
SEMICONDUCTOR
MBR40100CT Series RRooHHSS
Nell Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average
forward current
per device
per diode
lF(AV)
TC = 135°C, rated VR, 50% duty cycle ,rectangular
waveform
Non-repetitive peak surge current
lFSM
Surge applied at rated load condition half wave
single phase 60 Hz
VALUE UNIT
40
A
20
275 A
Non-repetitive avalanche energy,
per diode
Repetitive avalanche current
EAS TJ = 25°C, L = 60mH, IAS = 0.5A
7.5
lAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
V
(1)
FM
IF = 20A
IF = 40A
IF = 20A
IF = 40A
TJ = 25°C
TJ = 125°C
Maximum instantaneous reverse current
l
(2)
RM
TJ = 25°C
TJ = 125°C
Rated DC voltage
Maximum junction capacitance
CT
VR = 5 VDC (test signal range
100 kHz to 1 MHz) 25°C
Maximum voltage rate of change
dV/dt Rated VR
Note
(1) Pulse test : 300 µs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
VALUE UNIT
0.82
0.98
0.67
V
0.80
0.1
mA
11
1480 pF
10000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
Maximum storage temperature range
Tstg
Maximum thermal resistance,
junction to case
RthJC DC operation
per diode
per device
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth
and greased
Approximate weight
Mounting torque
minimum
maximum
VALUE
-55 to 175
-55 to 175
2.0
1.0
0.5
2
0.07
6 (5)
12 (10)
UNIT
°C
°C/W
g
oz.
kgf . cm
(lbf . in)
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Nell Semiconductors MBR40100CT
SEMICONDUCTOR
MBR40100CT Series RRooHHSS
Nell Semiconductors
Ordering Information Table
Device code
MBR F 40 100 CT
1 2345
1 - Schottky MBR series
2 - Package outline
"none" for TO-220AB
"F" for ITO-220AB (TO-220F)
3 - Current rating (40 = 40A, 20A x 2)
4 - Voltage ratings, 100=100V
5 - Circuit configuration, Center tap common cathode,
TO-220 series package
Fig.1 Maximum forward voltage drop
characteristics (Per Diode)
1000
100
10
TJ=175°
TJ=125°
TJ=25°
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward voltage drop, VFM(V)
Fig.2 Typical values of reverse current vs.
reverse voltage (Per Diode)
1000
100
10
1
0.1
0.01
0.001
0
TJ=175°
TJ=150°
TJ=125°
TJ=100°
TJ=75°
TJ=50°
TJ=25°
20 40 60 80
Reverse voltage, VR (V)
100
Fig.3 Typical junction capacitance vs.
reverse voltage (Per Diode)
10000
1000
TJ=25°
100
0
20 40 60 80
Reverse voltage, VR (V)
100
Fig.4 Maximum allowable case temperature vs.
average forward current (Per Diode)
180
170
DC
160
150
140
130
120
Square wave (D = 0.50)
80% Rated VR applied
110
See note (1)
100
0
5 10 15 20 25
Average forward current, lF(AV) (A)
30
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