DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2757GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
FEATURES Low on-state resistance
RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) Low gate charge QG = 10 nC TY...
