Power MOSFET. STL24N60M2 Datasheet

STL24N60M2 MOSFET. Datasheet pdf. Equivalent

STL24N60M2 Datasheet
Recommendation STL24N60M2 Datasheet
Part STL24N60M2
Description N-channel Power MOSFET
Feature STL24N60M2; .
Manufacture STMicroelectronics
Datasheet
Download STL24N60M2 Datasheet




STMicroelectronics STL24N60M2
STL24N60M2
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL24N60M2
VDS@TJ max
650 V
RDS(on) max.
0.210
ID
18 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STL24N60M2
Table 1: Device summary
Marking
Package
24N60M2
PowerFLAT™ 8x8 HV
Packing
Tape and reel
May 2016
DocID024777 Rev 3
This is information on a product in full production.
1/15
www.st.com



STMicroelectronics STL24N60M2
Contents
Contents
STL24N60M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 PowerFLAT™ 8x8 HV package information.................................... 10
4.2 PowerFLAT™ 8x8 HV packing information ..................................... 12
5 Revision history ............................................................................ 14
2/15 DocID024777 Rev 3



STMicroelectronics STL24N60M2
STL24N60M2
Electrical ratings
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID(1)
ID(1)
IDM(1)(2)
PTOT(1)
dv/dt(3)
dv/dt(4)
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
± 25
18
12
72
125
15
50
-55 to 150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1)the value is limited by package
(2)Pulse width limited by safe operating area.
(3)ISD 18 A, di/dt 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.
(4)VDS 480 V
Symbol
Rthj-case
Rthj-pcb(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Notes:
(1)When mounted on FR-4 board of inch², 2oz Cu.
Value
1
45
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value Unit
3.5 A
180 mJ
DocID024777 Rev 3
3/15







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