Voltage Regulators. BZT55B3V0 Datasheet

BZT55B3V0 Regulators. Datasheet pdf. Equivalent

BZT55B3V0 Datasheet
Recommendation BZT55B3V0 Datasheet
Part BZT55B3V0
Description 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators
Feature BZT55B3V0; Pb RoHS COMPLIANCE BZT55B SERIES 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADR.
Manufacture Taiwan Semiconductor
Datasheet
Download BZT55B3V0 Datasheet





Taiwan Semiconductor BZT55B3V0
Pb RoHS
COMPLIANCE
BZT55B SERIES
0.5 Watts Hermetically Sealed Glass
Zener Voltage Regulators
QUADRO MINI MELF
Features
— Zener voltage range 2.0 to 75 volts
— Mini-MELF package
— Surface device type mounting
— Hermetically sealed glass
— Compression Bonded Construction
— All external surfaces are corrosion
resistant and terminals are readily
solderable
— RoHS compliant
— Matte Tin(Sn) lead finish
— Blue color band indicates negative polarity
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Type Number
Symbol
Value
Power Dissipation
Ptot 500
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 200
Notes: These ratings are limiting values above which the serviceability of the diode may be impaired
Units
mW
oC
Version: B07



Taiwan Semiconductor BZT55B3V0
RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES)
600
500
400
300
200
100
0
0 40 80 120 160 200
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Tj = 25 °C
100
IZ = 5 mA
10
1
0 5 10 15 20 25
V - Z-Voltage (V)
Z
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
1.3
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
1.0 0
- 2 x 10-4/K
0.9 - 4 x 10-4/K
0.8
- 60 0
60 120 180 240
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
15
10
5
IZ = 5 mA
0
-5
0 10 20 30 40 50
VZ - Z-Voltage (V)
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
200
150
VR = 2 V
100 Tj = 25 °C
50
0
0 5 10 15 20 25
VZ - Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
Tj = 25 °C
1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
Version: B07



Taiwan Semiconductor BZT55B3V0
RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES)
100 1000
80
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
0 4 6 8 12
VZ - Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
20
IZ = 1 mA
100
5 mA
10 10 mA
1 Tj = 25 °C
0 5 10 15 20 25
VZ - Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
40
Ptot = 500 mW
T = 25 °C
amb
30
20
10
0
15 20 25 30
VZ - Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
35
1000
tP/T = 0.5
100
tP/T = 0.2
10
tP/T = 0.1
tP/T = 0.01
tP/T = 0.02
tP/T = 0.05
1
10-1
100
Single Pulse
RthJA = 300 K/W
T=T -T
jmax amb
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
101 102
tP - Pulse Length (ms)
Figure 10. Thermal Response
Version: B07





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