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C5703

Part Number	C5703
Manufacturer	Toshiba Semiconductor
Description	2SC5703
Published	Dec 6, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet	C5703 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) • High-speed switching: tf = 55 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO 100 V VCEX 80 V VCEO 50 V VEBO 7 V IC 4 A ICP ...

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