STP80N70F4. 80N70F4 Datasheet

80N70F4 Datasheet PDF, Equivalent


Part Number

80N70F4

Description

STP80N70F4

Manufacture

STMicroelectronics

Total Page 12 Pages
PDF Download
Download 80N70F4 Datasheet PDF


80N70F4 Datasheet
STP80N70F4
N-channel 68 V, 8.2 mΩ typ., 85 A STripFET™ DeepGATE™
Power MOSFET in TO-220 package
Datasheet — production data
Features
Order code
STP80N70F4
VDSS
68 V
RDS(on) max
< 9.8 mΩ
ID
85 A
N-channel enhancement mode
100% avalanched rated
Low gate charge
Very low on-resistance
Application
Switching applications
Description
This device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STP80N70F4
Marking
80N70F4
Package
TO-220
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 18377 Rev 2
1/12
www.st.com
12

80N70F4 Datasheet
Contents
Contents
STP80N70F4
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 18377 Rev 2


Features Datasheet pdf STP80N70F4 N-channel 68 V, 8.2 mΩ typ. , 85 A STripFET™ DeepGATE™ Power MO SFET in TO-220 package Datasheet — pr oduction data Features Order code STP8 0N70F4 VDSS 68 V RDS(on) max < 9.8 m ID 85 A ■ N-channel enhancement m ode ■ 100% avalanched rated ■ Low g ate charge ■ Very low on-resistance Application Switching applications Des cription This device is an N-channel Po wer MOSFET developed using ST’s STrip FET™ DeepGATE™ technology. The devi ce has a new gate structure and is spec ially designed to minimize on-state res istance to provide superior switching p erformance. 3 2 1 TO-220 Figure 1. Int ernal schematic diagram $ ' 3 !-V Table 1. Device summary Or der code STP80N70F4 Marking 80N70F4 P ackage TO-220 Packaging Tube December 2012 This is information on a product in full production. Doc ID 18377 Rev 2 1/12 www.st.com 12 Contents Content s STP80N70F4 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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