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FDS9933BZ Datasheet, Equivalent, PowerTrench MOSFET.Dual P-Channel 2.5V Specified PowerTrench MOSFET Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| Part | FDS9933BZ |
|---|---|
| Description | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| Feature | FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimiz. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | FDS9933BZ |
|---|---|
| Description | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| Feature | FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimiz. |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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