PD - 96101C
IRF7103QPbF
Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area....
