RECTIFIER DIODES. 1N5408 Datasheet

1N5408 DIODES. Datasheet pdf. Equivalent

Part 1N5408
Description SILICON RECTIFIER DIODES
Feature 1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High s.
Manufacture EIC
Datasheet
Download 1N5408 Datasheet

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 1N5408 Datasheet
1N5400 THRU 1N5408 GENERAL PURPOSE PLASTIC RECTIFIER Reverse 1N5408 Datasheet
www.DataSheet4U.com 1N5400 thru 1N5408 1N5404 and 1N5406 ar 1N5408 Datasheet
www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. G 1N5408 Datasheet
1N5400 - 1N5408 3.0A RECTIFIER Features · · · · · Diffused J 1N5408 Datasheet
1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N54 1N5408 Datasheet
1I5400 thru 1N5408 Axial Lead Standard Recovery Silicon Rect 1N5408 Datasheet
1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATU 1N5408 Datasheet
CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N 1N5408 Datasheet
1N5400-1N5408 High-reliability discrete products and engine 1N5408 Datasheet
Recommendation Recommendation Datasheet 1N5408 Datasheet





1N5408
1N5400 - 1N5408
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
SILICON RECTIFIER DIODES
DO - 201AD
0.21 (5.33)
0.19 (4.83)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNIT
VRRM
VRMS
VDC
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
IF 3.0 A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
200
0.95
5.0
50
28
15
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005



1N5408
RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
2.4
1.8
1.2
0.6
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
Pulse Width = 300 µs
2% Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
250
200
150
100
50 8.3ms SINGLE HALF SINE-WAVE
(JEDEC) Method
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
50 TJ = 25 °C
10
5
1
1
2
4 10 20
40 100
REVERSE VOLTAGE, VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)