AON6718 MOSFET Datasheet

AON6718 Datasheet, PDF, Equivalent


Part Number

AON6718

Description

30V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 7 Pages
Datasheet
Download AON6718 Datasheet


AON6718
AON6718
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON6718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
VDS (V) = 30V
ID = 80A
RDS(ON) < 3.7m
RDS(ON) < 5m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
80
63
210
18
15
40
80
83
33
2.1
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
42
1.2
Max
17
60
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

AON6718
AON6718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
0.025 0.1
20
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
0.1
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.3 1.8 2.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
VGS=10V, ID=20A
3.1 3.7
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
4.3 5.2
VGS=4.5V, ID=20A
4.1 5
gFS Forward Transconductance
VDS=5V, ID=20A
87
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.4 0.7
40
V
mA
µA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2975
485
204
0.28
3719
693
340
0.56
4463
900
476
0.84
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
48 60 72
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
20 25 30
12 15 18
Qgd Gate Drain Charge
6 10 14
tD(on)
Turn-On DelayTime
9.2
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
10.7
tD(off)
Turn-Off DelayTime
RGEN=3
40
tf Turn-Off Fall Time
12.5
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
10 13 16
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
21 26.5 32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev3: Nov-10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Features AON6718 30V N-Channel MOSFET SRFET TM G eneral Description Product Summary SR FETTM AON6718 uses advanced trench tech nology with a monolithically integrated Schottky diode to provide excellent RD S(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 80A RDS(ON) < 3.7m RDS(ON) < 5mΩ (VGS = 10V) (VGS = 1 0V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G D SRFE TTM Soft Recovery MOSFET: Integrated Sc hottky Diode S Absolute Maximum Rating s TA=25°C unless otherwise noted Para meter Symbol Drain-Source Voltage VD S Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continu ous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalan che energy L=0.1mH C IDSM IAR EAR TC= 25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperat.
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