PowerTrench MOSFET. FDP070AN06A0 Datasheet

FDP070AN06A0 Datasheet PDF, Equivalent


Part Number

FDP070AN06A0

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
PDF Download
Download FDP070AN06A0 Datasheet PDF


FDP070AN06A0 Datasheet
October 2013
FDP070AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 7 mΩ
Features
Applications
RDS(on) = 6.1 m(Typ.) @ VGS = 10 V, ID = 80 A
Synchronous Rectification for ATX / Server / Telecom PSU
Qg(tot) = 51 nC (Typ.) @ VGS = 10 V
Battery Protection Circuit
Low Miller Charge
Motor Drives and Uninterruptible Power Supplies
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82567
D
GDS TO-220
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 97oC, VGS = 10V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max. (Note 2)
S
FDP070AN06A0
60
±20
80
Figure 4
190
175
1.17
-55 to 175
0.86
62
Unit
V
V
A
A
mJ
W
W/oC
oC
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDP070AN06A0 Rev. C2
1
www.fairchildsemi.com

FDP070AN06A0 Datasheet
Package Marking and Ordering Information
Device Marking
FDP070AN06A0
Device
FDP070AN06A0
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 80A, VGS = 10V
ID
TJ
=
=
8107A5,oCVGS
=
10V,
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 80A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 30V, ID = 80A
VGS = 10V, RGS = 5.6
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 93µH, IAS = 64A.
2: Pulse width = 100s.
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
Min Typ Max Unit
60 - - V
- - 1 µA
- - 250
- - ±100 nA
2-4
- 0.0061 0.007
- 0.0127 0.015
V
- 3000 -
pF
- 510 -
pF
- 230 -
pF
51 66 nC
- 5.4 7 nC
- 17 - nC
- 11.6 -
nC
- 16 - nC
- - 256 ns
- 12 - ns
- 159 -
ns
- 27 - ns
- 35 - ns
- - 93 ns
-
-
1.25
V
- - 1.0 V
- - 34 ns
- - 35 nC
©2003 Fairchild Semiconductor Corporation
FDP070AN06A0 Rev. C2
2
www.fairchildsemi.com


Features Datasheet pdf FDP070AN06A0 — N-Channel PowerTrench® MOSFET October 2013 FDP070AN06A0 N-C hannel PowerTrench® MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS (on) = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg( tot) = 51 nC (Typ.) @ VGS = 10 V • B attery Protection Circuit • Low Mill er Charge • Motor Drives and Uninter ruptible Power Supplies • Low Qrr Bo dy Diode • UIS Capability (Single Pu lse and Repetitive Pulse) Formerly dev elopmental type 82567 D GDS TO-220 G MOSFET Maximum Ratings TC = 25°C unl ess otherwise noted. Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 97oC, VG S = 10V) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derat e above 25oC Operating and Storage Temp erature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient, Max. (Note 2) S FDP070AN06A0 60 ±20 8.
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