PowerTrench MOSFET. FDI8442_F085 Datasheet

FDI8442_F085 Datasheet PDF, Equivalent


Part Number

FDI8442_F085

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDI8442_F085 Datasheet PDF


FDI8442_F085 Datasheet
September 2010
FDI8442_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 3.1m:
Features
„ Typ rDS(on) = 2.3m: at VGS = 10V, ID = 80A
„ Typ Qg(10)= 181nC at VGS= 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architectures and VRMs
„ Primary Switch for 12V Systems
AD FREE I
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
TO-262AB
FDI SERIES
©2010 Fairchild Semiconductor Corporation
FDI8442_F085 Rev. A
www.fairchildsemi.com

FDI8442_F085 Datasheet
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC<158oC, VGS = 10V)
Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RTJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy
Power Dissipation
PD Derate above 25oC
(Note 1)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
Ratings
40
±20
80
23
See Figure 4
720
254
1.7
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RTJC
RTJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Package Marking and Ordering Information
(Note 2)
0.59
62
oC/W
oC/W
Device Marking
FDI8442
Device
FDI8442_F085
Package
TO-262AB
Reel Size
Tube
Tape Width
N/A
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250PA, VGS = 0V
VDS = 32V
VGS = 0V
TJ = 150°C
VGS = r20V
40
-
-
-
-
-
-
-
Quantity
50 units
Max Units
-
1
250
r100
V
PA
nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = VGS, ID = 250PA
ID = 80A, VGS = 10V
ID = 80A, VGS = 10V,
TJ = 175°C
2 2.9 4
V
- 2.3 3.1
- 3.9 5.3 m:
VDS = 25V, VGS = 0V,
f = 1MHz
- 12200 -
- 1040 -
- 640 -
pF
pF
pF
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 80A
Ig = 1mA
-
-
-
-
-
1.0 -
181 235
23 30
49 -
26 -
:
nC
nC
nC
nC
- 41 - nC
FDI8442_F085 Rev. A
2 www.fairchildsemi.com


Features Datasheet pdf FDI8442_F085 N-Channel PowerTrench® MOS FET MPLEMENTATION September 2010 FDI8 442_F085 N-Channel PowerTrench® MOSFE T 40V, 80A, 3.1m: Features „ Typ rDS( on) = 2.3m: at VGS = 10V, ID = 80A „ T yp Qg(10)= 181nC at VGS= 10V „ Low M iller Charge „ Low Qrr Body Diode „ U IS Capability (Single Pulse and Repetit ive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automot ive Engine Control „ Powertrain Manage ment „ Solenoid and Motor Drivers „ E lectronic Steering „ Integrated Starte r / Alternator „ Distributed Power Arc hitectures and VRMs „ Primary Switch f or 12V Systems AD FREE I LE SOURCE D RAIN GATE DRAIN (FLANGE) TO-262AB FDI SERIES ©2010 Fairchild Semiconductor Corporation FDI8442_F085 Rev. A www.f airchildsemi.com FDI8442_F085 N-Channe l PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise not ed Symbol Parameter VDSS VGS ID Dra in to Source Voltage Gate to Source Vol tage Drain Current Continuous (TC<158oC, VGS = 10V) Drain Current Continuous (Tamb.
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