N-Channel Enhancement Mode Field Effect Transistor
Description
CEM0415
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM R...
