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MTB010N06I3

N-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB010N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ) RDS(ON)@VGS=4.5V, ID=15A 12.8 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching ...

CYStech Electronics

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