JANTX2N7227U Datasheet PDF | International Rectifier





(PDF) JANTX2N7227U Datasheet PDF

Part Number JANTX2N7227U
Description POWER MOSFET
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N7227U Datasheet PDF

Features: PD - 91551C POWER MOSFET SURFACE MOUNT( SMD-1) Product Summary Part Number RD S(on) IRFN350 0.315 Ω ID 14A IRFN 350 JANTX2N7227U JANTXV2N7227U REF:MIL- PRF-19500/592 400V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET techn ology is the key to International Recti fier’s advanced line of power MOSFET transistors. The efficient geometry des ign achieves very low on-state resistan ce combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOS FETs, such as voltage control, very fas t switching, ease of paralleling and el ectrical parameter temperature stabilit y. They are well-suited for application s such as switching power supplies, mot or controls, inverters, choppers, audio amplifiers, high energy pulse circuits , and virtually any application where h igh reliability is required. The HEXFET transistor’s totally isolated packag e eliminates the need for additional is olating material between the device and the heatsink. This improves the.

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JANTX2N7227U datasheet
PD - 91551C
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on)
IRFN350
0.315
ID
14A
IRFN350
JANTX2N7227U
JANTXV2N7227U
REF:MIL-PRF-19500/592
400V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Surface Mount
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
14
9.0
56
150
1.2
±20
700
14
15
4.0
-55 to 150
300(for 5 seconds)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
1/25/01

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