PD -94917A
IRG4IBC20UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink
VCES = 600V
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
IGBT co-packaged with HEXFRE...
