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IRG7PG42UD-EPbF

INSULATED GATE BIPOLAR TRANSISTOR

Description

IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Ultra fast soft recovery co-pak diode  Tight parameter distribution  Lead-free package Benefits  High efficiency ...

International Rectifier

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IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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