740 MOSFET Datasheet

740 Datasheet, PDF, Equivalent


Part Number

740

Description

400V N-Channel MOSFET

Manufacture

GFD

Total Page 9 Pages
Datasheet
Download 740 Datasheet


740
400V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS technology.
This advanced technology has been especially
tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche
and commutation mode. These devices are
well suited for high efficiency switched mode
power supplies, active power factor correction
based on half bridge topology.
740
VDSS RDS(ON)
ID
400V 0.55Ω
10.5A
Features
• 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
• Low gate charge ( typical 30nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
740
TO-220
0GFD
www.goford.cn TEL0755-86350980 FAX0755-86350963

740
740
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
740
740F
VDSS
ID
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
400
10.5
6.6
10.5
6.6
IDM Drain Current- Pulsed
(Note 1)
42
42
VGSS
Gate-Source Voltage
± 30
EAS
Single Pulsed Avalanche Energy
(Note 2)
378
Units
V
A
A
A
V
mJ
EAR Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,
1/8" from case for 5 seconds
139
1.11
45.5
0.36
-55 to +150
300
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
SLP740C SLF740C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.90
2.75
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5 -- °C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
www.goford.cn TEL0755-86350980 FAX0755-86350963


Features 400V N-Channel MOSFET GENERAL DESCRIPTIO N This Power MOSFET is produced using a dvanced planar stripe DMOS technology. This advanced technology has been espec ially tailored to minimize on-state res istance, provide superior switching per formance, and withstand high energy pul se in the avalanche and commutation mod e. These devices are well suited for hi gh efficiency switched mode power suppl ies, active power factor correction bas ed on half bridge topology. 740 VDSS RDS(ON) ID 400V 0.55Ω 10.5A Featur es • 10.5A, 400V, RDS(on) = 0.55Ω @ VGS = 10 V • Low gate charge ( typica l 30nC) • Fast switching • 100% ava lanche tested • Improved dv/dt capabi lity Ordering Information PART NUMBER PACKAGE BRAND 740 TO-220 0GFD www.g oford.cn TEL:0755-86350980 FAX:0755 -86350963 740 Absolute Maximum Rating s TC = 25°Cunless otherwise noted Sy mbol Parameter 740 740F VDSS ID Dr ain-Source Voltage Drain Current - Cont inuous (TC = 25°C) - Continuous (TC = 100°C) 400 10.5 6.6 10.5 6.6 IDM Drain .
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