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HBN1803M65
Octuple High Voltage NPN Epitaxial Planar Transistor
Description
CYStech Electronics Corp. Octuple High Voltage
NPN
Epitaxial Planar
Transistor
HBN1803M65 Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 1/7 Description High breakdown voltage. (BVCEO=400V) Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. Complementary to HBP1804M65 Pb-free lead plating and halogen-free pa...
Cystech Electonics
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HBN1803M65
Octuple High Voltage NPN Epitaxial Planar Transistor
- Cystech Electonics
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