H02N60SJ Datasheet (data sheet) PDF





H02N60SJ Datasheet, N-Channel Power Field Effect Transistor

H02N60SJ   H02N60SJ  

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HI-SINCERITY MICROELECTRONICS CORP. Spe c. No. : MOS200504 Issued Date : 2005.0 5.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without deg ratding performance over time. In addit ion, this advanced MOSFET is

H02N60SJ Datasheet, N-Channel Power Field Effect Transistor

H02N60SJ   H02N60SJ  
designed to withstand high energy in av alanche and commutation modes. The new energy efficient design also offers a d rain-to-source diode with a fast recove ry time. Designed for high voltage, hig h speed switching applications in power supplies, converters and PWM motor con trols, these devices are particularly w ell suited for bridge circuits where di ode speed and commutating sa








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