UTC606P-H MOSFET Datasheet

UTC606P-H Datasheet, PDF, Equivalent


Part Number

UTC606P-H

Description

P-CHANNEL 1.8V TRENCH MOSFET

Manufacture

UTC

Total Page 3 Pages
Datasheet
Download UTC606P-H Datasheet


UTC606P-H
UNISONIC TECHNOLOGIES CO., LTD
UTC606P-H
Preliminary
-6A, -12V, P-CHANNEL 1.8V
TRENCH MOSFET
Power MOSFET
DESCRIPTION
The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and high switching speed.
The UTC UTC606P-H is suitable for battery management, load
switch and battery protection.
FEATURES
* RDS(ON) < 26m@ VGS= -4.5V, ID= -6A
RDS(ON) < 35m@ VGS= -2.5V, ID= -5A
RDS(ON) < 53m@ VGS= -1.8V, ID= -4A
* High switching speed
* High performance trench technology for extremely low RDS(ON)
SYMBOL
65 4
1 23
SOT-26
ORDERING INFORMATION
Ordering Number
UTC606PG-AG6-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOT-26
S: Source
Pin Assignment
123456
Packing
D D G D D S Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-B34.b

UTC606P-H
UTC606P-H
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Drain Current
Continuous (Note 2)
Pulsed
ID
IDM
-6
-20
A
A
Power Dissipation
PD 300 mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction-to-Case
SYMBOL
θJA
θJC
RATINGS
380
110
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
BVDSS
TJ
IDSS
IGSS
ID=-250µA, VGS=0V
ID=-250µA, Referenced to 25°C
VDS=-10V, VGS=0V
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
On State Drain Current
Forward Transconductance
VGS(TH)
BVGS(th)
TJ
RDS(ON)
ID(ON)
gFS
VDS=VGS, ID=-250µA
ID=-250µA, Referenced to 25°C
VGS=-4.5V, ID=-6A
VGS=-2.5V, ID=-5A
VGS=-1.8V, ID=-4A
VGS=-4.5V, ID=-6A, TJ=125°C
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-6A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-6V, f=1.0MHz
SWITCHING PARAMETERS (Note)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=-4.5V, VDS=-6V, ID=-6A
VGS=-4.5V, VDD=-6V, ID=-1A,
RGEN=6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain–Source
Diode Forward Current
IS
Drain–Source Diode Forward Voltage
VSD IS=-1.3A,VGS=0V (Note)
Note: Pulse Test: Pulse width 300µs, Duty cycle 2.0%
MIN TYP MAX UNIT
-12 V
-3
mV/°
C
-1 µA
100 nA
-100 nA
-0.4 -0.5 -1.5 V
2.5
mV/°
C
21
26
34
28
-20
25
26 m
35 m
53 m
35 m
A
S
1699
679
423
pF
pF
pF
18 25 nC
3 nC
4.2 nC
11 19 ns
10 20 ns
89 142 ns
70 112 ns
-1.3
-0.6 -1.2
A
V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-B34.b


Features UNISONIC TECHNOLOGIES CO., LTD UTC606P- H Preliminary -6A, -12V, P-CHANNEL 1. 8V TRENCH MOSFET Power MOSFET  DES CRIPTION The UTC UTC606P-H is a P-chann el MOSFET, it uses UTC’s advanced tec hnology to provide the customers with a minimum on state resistance and high s witching speed. The UTC UTC606P-H is su itable for battery management, load swi tch and battery protection.  FEATURE S * RDS(ON) < 26mΩ @ VGS= -4.5V, ID= -6A RDS(ON) < 35mΩ @ VGS= -2.5V, ID= -5A RDS(ON) < 53mΩ @ VGS= -1.8V, ID= -4A * High switching speed * High perfo rmance trench technology for extremely low RDS(ON)  SYMBOL 65 4 1 23 SOT-2 6  ORDERING INFORMATION Ordering N umber UTC606PG-AG6-R Note: Pin Assignme nt: G: Gate D: Drain Package SOT-26 S: Source Pin Assignment 123456 Packing D D G D D S Tape Reel  MARKING w ww.unisonic.com.tw Copyright © 2015 Un isonic Technologies Co., Ltd 1 of 3 QW -R502-B34.b UTC606P-H Preliminary Po wer MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER.
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