VCES = 600V IC = 50A, TC =100°C
IRGP6650DPbF IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 35A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IRGP6650DPbF TO‐247AC
C Collector
GCE
IRGP6650D‐EPbF TO‐247AD
E Emitter
Fe...
