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IRGPS66160DPBF

International Rectifier

Insulated Gate Bipolar Transistor


Description
  IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications  Welding  H Bridge Converters Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   G E n-channel G Gate IRGPS66160DPbF  Super 247  C Collector E Emitter Features Low VCE(ON) and Switching Losses Optimize...



International Rectifier

IRGPS66160DPBF

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