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IRGSL6B60KPbF

Insulated Gate Bipolar Transistor

Description

INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent ...

International Rectifier

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IRGSL6B60KPbF Insulated Gate Bipolar Transistor - International Rectifier

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