P-CHANNEL MOSFET. UT3409 Datasheet

UT3409 MOSFET. Datasheet pdf. Equivalent

UT3409 Datasheet
Recommendation UT3409 Datasheet
Part UT3409
Description P-CHANNEL MOSFET
Feature UT3409; UNISONIC TECHNOLOGIES CO., LTD UT3409 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTI.
Manufacture UTC
Datasheet
Download UT3409 Datasheet




UTC UT3409
UNISONIC TECHNOLOGIES CO., LTD
UT3409
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC UT3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is suitable for use
as a load switch or in PWM applications.
FEATURES
* RDS(ON) <130m@VGS = -10V
* RDS(ON) < 200m@VGS = -4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Note:
UT3409G-AE2-R
UT3409G-AE3-R
UT3409G-AL3-R
Pin Assignment: S: Source
G: Gate
Package
SOT-23-3
SOT-23
SOT-323
D: Drain
Pin Assignment
123
SGD
SGD
SGD
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 4
QW-R502-244.E



UTC UT3409
UT3409
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-30
±20
V
V
Continuous Drain Current (Note 3)
ID
-2.6 A
Pulsed Drain Current (Note 2)
IDM
-20
A
Power Dissipation
Junction Temperature
PD 1.4 W
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1 in2 copper pad of FR4 board
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
RATINGS
90
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
ID=-250μA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
ON CHARACTERISTICS
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VGS(TH)
ID(ON)
RDS(ON)
VDS=VGS, ID=-250μA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.6A
VGS=-4.5V, ID=-2A
-1
-5
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
10V
4.5V
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=-10V, VDS=-15V, ID=-2.6A
VGS=-10V, VDS=-15V,
RL=5.8, RGEN=3
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD IS=-1A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Body Diode Reverse Recovery Time
tRR IF=-2.6A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR IF=-2.6A, dI/dt=100A/μs
TYP
-1.9
97
166
302
50.3
37.8
6.8
2.4
1.6
0.95
7.5
3.2
17
6.8
-0.82
16.8
10
MAX
-1
±100
-3
130
200
370
9
-1
-2
22
UNIT
V
μA
nA
V
A
m
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
A
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-244.E



UTC UT3409
UT3409
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
500
1000
1500
2000
Gate Threshold Voltage, VTH (mV)
Drain Current vs.
Drain-Source Breakdown Voltage
300
250
200
150
100
50
0
0 10 20 30
40
Drain-Source Breakdown Voltage, BVDSS(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-244.E







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)