Power MOSFET. UT3414 Datasheet

UT3414 MOSFET. Datasheet pdf. Equivalent

UT3414 Datasheet
Recommendation UT3414 Datasheet
Part UT3414
Description Power MOSFET
Feature UT3414; UNISONIC TECHNOLOGIES CO., LTD UT3414 N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advan.
Manufacture Unisonic Technologies
Datasheet
Download UT3414 Datasheet




Unisonic Technologies UT3414
UNISONIC TECHNOLOGIES CO., LTD
UT3414
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UT3414 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate voltages
as low as 1.8V. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 50m@VGS = 4.5V
* RDS(ON) < 63m@VGS = 2.5V
* RDS(ON) < 87m@VGS = 1.8V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
UT3414G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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Unisonic Technologies UT3414
UT3414
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID 4.2 A
Pulsed Drain Current
IDM 15 A
Power Dissipation
PD 1.4 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL MIN TYP MAX
θJA 100 125
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=16V, VGS=0V
VDS=0V, VGS=±8V
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
VGS(TH)
ID(ON)
RDS(ON)
VDS=VGS, ID=250µA
VDS=5V, VGS=4.5V
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.7A
VGS=1.8V, ID=3.2A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=10V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Turn ON Delay Time
Turn ON Rise Time
Turn OFF Delay Time
Turn OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=10V, VGS=5V, RL=2.7
RG=6
VDS=10V, ID=4.2A, VGS=4.5V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD VGS=0V, IS=1A
Maximum Body-Diode Continuous
Current
IS
Body Diode Reverse Recovery Time
tRR IF=4A, dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
QRR IF=4A, dI/dt=100A/μs
MIN TYP MAX UNIT
20 V
1 µA
100 nA
0.4 0.6 1
V
15 A
41 50
52 63 m
67 87
436 pF
66 pF
44 pF
5.5 ns
6.3 ns
40 ns
12.7 ns
6.2 nC
1.6 nC
0.5 nC
0.76 1
2
12.3
3.5
V
A
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Unisonic Technologies UT3414
UT3414
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
1200
1000
800
600
400
200
0
0
200 400
600 800
Source to Drain Voltage,VSD (mV)
Power MOSFET
Switching Time Waveforms
VDS 90%
10%
VGS
tD(ON)
tTHL
tD(OFF)
tTLH
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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