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PMZB600UNE
N-channel Trench MOSFET
Description
SOT883B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect
Transistor
(FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra sm...
NXP
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