SILICON TRANSISTOR. 13005BA Datasheet

13005BA Datasheet PDF, Equivalent


Part Number

13005BA

Description

NPN SILICON TRANSISTOR

Manufacture

Unisonic Technologies

Total Page 3 Pages
PDF Download
Download 13005BA Datasheet PDF


13005BA Datasheet
UNISONIC TECHNOLOGIES CO., LTD
13005BA
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
1
* VCEO(SUS)= 800 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 800V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
13005BAL-T92-A-B
13005BAG-T92-A-B
TO-92
13005BAL-T92-A-K
13005BAG-T92-A-K
TO-92
13005BAL-T92-F-B
13005BAG-T92-F-B
TO-92
13005BAL-T92-F-K
13005BAG-T92-F-K
TO-92
Note: Pin assignment: E: Emitter
C: Collector B: Base
Pin Assignment
123
ECB
ECB
BCE
BCE
13005BAL-T92-A-B
(1)Packing Type
(1) B: Bluk, K: Bulk
(2)Pin Assignment
(2) refer to Pin Assignment
(3)Package Type
(3) T92: TO-92
(4)Lead Free
(4) L: Lead Free, G: Halogen Free
MARKING
TO-92
Packing
Tape Box
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R201-089.c

13005BA Datasheet
13005BA
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Collector-Emitter Voltage (VBE=0)
VCEO(SUS)
VCES
400
800
V
V
Collector-Base Voltage
Emitter Base Voltage
VCBO 800 V
VEBO 9 V
Collector Current
Continuous
Peak (1)
IC
ICM
3A
8A
Base Current
Continuous
Peak (1)
IB
IBM
2A
4A
Emitter Current
Continuous
Peak (1)
IE
IEM
6A
12 A
Power Dissipation at TA=25°С
Junction Temperature
PD 1 W
TJ
-65 ~ +150
°С
Storage Temperature Range
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
150
112
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
800
V
Collector Cutoff Current
ICBO
VCBO=Rated Value, VBE(OFF)=1.5V
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
1
5 mA
Emitter Cutoff Current
IEBO VEB=9V, IC=0
1 mA
ON CHARACTERISTICS (Note 1)
hFE1 IC=0.5A, VCE=5V
15 50
DC Current Gain
hFE2 IC=1A, VCE=5V
10 60
hFE3 IC=2A, VCE=5V
8 40
IC=1A, IB=0.2A
0.5 V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=0.5A
IC=4A, IB=1A
0.6 V
1V
IC=2A, IB=0.5A, TA=100°С
1V
IC=1A, IB=0.2A
1.2 V
Base-Emitter Saturation Voltage
VBE(SAT) IC=2A, IB=0.5A
1.6 V
IC=2A, IB=0.5A, TC=100°С
1.5 V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT IC=500mA, VCE=10V, f=1MHz
4
MHz
Output Capacitance
COB VCB=10V, IE=0, f=0.1MHz
65 pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
0.025 0.1 μs
Rise Time
Storage Time
tR VCC=125V, IC=2A, IB1=IB2=0.4A,
tS tP=25μs, Duty Cycle1%
0.3 0.7 μs
1.7 4 μs
Fall Time
tF
Notes: 1. Pulse Test: Pulse Width=5ms, Duty Cycle10%
0.4 0.9 μs
Note: 2. Pulse Test: PW=300μs, Duty Cycle2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-089.c


Features Datasheet pdf UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR N PN SILICON POWER TRANSISTORS  DESCR IPTION These devices are designed for high-voltage, high-speed power switchin g inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEAT URES 1 * VCEO(SUS)= 800 V * Reverse b ias SOA with inductive loads @ TC = 100 °С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 800V blocking capabil ity * SOA and switching applications in formation  APPLICATIONS * Switchin g regulator’s, inverters * Motor cont rols * Solenoid/Relay drivers * Deflect ion circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen Fr ee Package 13005BAL-T92-A-B 13005BAG -T92-A-B TO-92 13005BAL-T92-A-K 1300 5BAG-T92-A-K TO-92 13005BAL-T92-F-B 13005BAG-T92-F-B TO-92 13005BAL-T92-F -K 13005BAG-T92-F-K TO-92 Note: Pin assignment: E: Emitter C: Collector B: Base Pin Assignment 123 ECB ECB BCE BC.
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