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EFFECT TRANSISTOR. KF3N80D Datasheet

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EFFECT TRANSISTOR. KF3N80D Datasheet






KF3N80D TRANSISTOR. Datasheet pdf. Equivalent




KF3N80D TRANSISTOR. Datasheet pdf. Equivalent





Part

KF3N80D

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufacture

KEC

Datasheet
Download KF3N80D Datasheet


KEC KF3N80D

KF3N80D; SEMICONDUCTOR TECHNICAL DATA KF3N80D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, suc h as fast switching time, low on resist ance, low gate charge and excellent ava lanche characteristics. It is mainly su itable for LED Lighting and switching m ode power supplies. FEATURES VDSS= 800 V, ID= 2.7A Drain-.


KEC KF3N80D

Source ON Resistance : RDS(ON)=4.2 Qg(ty p) =12nC @VGS = 10V MAXIMUM RATING (T a=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Volta ge VDSS VGSS 800 30 @TC=25 Drain Cu rrent @TC=100 Pulsed (Note1) Single P ulsed Avalanche Energy (Note 2) Repetit ive Avalanche Energy (Note 1) Peak Diod e Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25.


KEC KF3N80D

Derate above 25 ID IDP EAS EAR dv/dt P D 2.7 1.7 6* 175 4.4 4.5 69.4 0.55 Ma ximum Junction Temperature Storage Temp erature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistanc e, Junction-to-Case RthJC Thermal Resi stance, Junction-toAmbient RthJA * : Drain current limited by maximum juncti on temperature. 1.8 110 UNIT V V A mJ mJ V/ns W W/ /W /.



Part

KF3N80D

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufacture

KEC

Datasheet
Download KF3N80D Datasheet




 KF3N80D
SEMICONDUCTOR
TECHNICAL DATA
KF3N80D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS= 800V, ID= 2.7A
Drain-Source ON Resistance : RDS(ON)=4.2
Qg(typ) =12nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
800
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
2.7
1.7
6*
175
4.4
4.5
69.4
0.55
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
1.8
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF3N80D
A
CD
B
H
G
FF
J
E
123
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O Max 0.1
O
DPAK (1)
A
C
M
N
G
FF
123
KF3N80I
H
J
P
L
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
C 5.34 +_0.3
D 0.7+_0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
D
IPAK(1)
G
2012. 8. 10
S
Revision No : 0
1/6





 KF3N80D
KF3N80D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=800V, VGS=0V
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.35A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=3A
VGS=10V
(Note4,5)
VDD=400V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=2.7A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=3A, VGS=0V,
Qrr dIs/dt=100A/us
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =37mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
800 - - V
- 0.8 - V/
- - 10 A
2.5 - 4.5 V
- - 100 nA
- 3.4 4.2
- 12 -
-6-
-2-
- 25 -
- 27 -
- 60 -
- 30 -
- 520 -
- 60 -
-9-
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 450 -
ns
- 3.0 -
C
Marking
11
KF3N80
KF3N80
D 001
2
I 001
2
1 PRODUCT NAME
2 LOT NO
2012. 8. 10
Revision No : 0
2/6





 KF3N80D
KF3N80D/I
Fig1. ID - VDS
10
VGS=10V
VGS=6V
VGS=5V
1
0.1
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
101
100 C
25 C
100
10-1
0.4
0.6 0.8 1.0 1.2
Source - Drain Voltage VSD (V)
1.4
2012. 8. 10
Revision No : 0
101
VDS=20V
Fig2. ID - VGS
25 C
100
100 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6
5
4 VGS=6V
3 VGS=10V
2
1
0
01234
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
IDS = 1.35A
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
3/6



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